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Published papers have been cited > 9300 times (from Google Scholar)
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Prestige
International conferences:
IEDM-
23 papers including 1
Invited paper
(RF CMOS).
Symp. On VLSI-
18 papers including 1
Highlight Section paper.
Int¡¦l Microwave Symp.-
17 papers & 1 in best paper award competition (24 finalist).
-
Panelist/Tutorial/Invited Talk
•1st time Invited Plenary Speech from Taiwan's academic society in IEEE EDTM, March 12,2019.
(http://ewh.ieee.org/conf/edtm/2019/program/plenary.html)
•Invited talk, Asia-Pacific Microwave Conf. (APMC), 2013.
•Invited talk, Progress In Electromagnetics Research Symp. (PIERS), 2013.
•Invited talk, Asia-Pacific Radio Science Conference (AP-RASC), 2013.
•Invited talk, Material Research Society 2013.
•Invited talk, 8th Intl Conf. on Si Epitaxy & Heterostructures (ICSI),
2013.
•Panelist,
IEEE Intl. Conf. on Solid-State & IC Tech. (ICSICT),
2012.
•1st Invited
talk, Electro-Chemical Society, 2012.
•IBM Exploratory Device & High-k Gate Stack Interdepartmental
Seminar, 2011.
•Panelist, Si Nanoelectronics Workshop
(SNW), 2011.
•11th Non-Volatile Memory Technology Symp. (NVMTS),
2011.
•Invited talk, SanDisk, USA 2011;
Toshiba,
Japan, 2011.
•Invited talk, 3D Transistor Workshop, Japan 2010
(Yushiro Nishi, Stanford).
•Tutorial, Material Research Society-
Symposium G on Nonvolatile
Memories, San Francisco, CA 2010.
•Invited talk, Samsung Electronics,
2003, 2009 (EVP).
•IEDM Executive Committee, 2008~2010.
•Invited talk, 16th Insulating Films on Semiconductors (INFOS),
Cambridge UK, 2009.
•Invited talk, 7th Intl Symp on High k Gate Stacks (ISHGS)-ECS,
Vienna, Austria, 2009.
•Invited talk, Intl. Solid-State Devices & Materials Conf. (SSDM),
Japan, 2008.
•Invited talk, Intl. Symp. Advanced Gate Stack Tech. (AGST),
TX USA, 2008, 2011.
•Invited talk, European Materials Research Society (E-MRS),
2006, 2012.
•Int¡¦l Conf. on Solid-State and Integrated-Circuit Technology (ICSICT)
2004, 2006.
•Symposium organizer: 3rd Int¡¦l Symp. on High k Gate Stacks (ISHGS)-
ECS, 2005.
•Panelist, New channel MOSFET
workshop, SEMATECH, 2005.
•Invited talk, European Solid State Device Research Conf, (ESSDERC),
2005.
•Invited talk, Ge technology workshop, IMEC,
2005.
•European
Solid State Device Research Conf, (ESSDERC),
France,
2005.
•5th, 11th Non-Volatile Memory Technology Symp. (NVMTS), 2004,
2011.
•Panelist, 62nd Device Research
Conference (DRC), 2004.
•Asia-Pacific Microwave Conf. (APMC), Delhi,
India, 2004.
•Invited talk, Intl SiGe Technology & Device Meeting (ISTDM),
2004, 2012.
•3rd International Workshop on New Group IV
Semiconductors, Sendai, Japan, 2004.
•Invited talk, International Electron
Devices Meeting (IEDM),
2003.
•ElectroChemical Soc.(ECS)
Fall Meeting, Orlando, Florida, 2003.
•International
Symposium on Advanced Devices and Process Technology,
Tokyo, Japan,
2003.
•Int¡¦l Symp. on Substrate Engineering/Nano
SOI Technology for Advanced Semiconductor Devices, Seoul, Korea,
2003.
•International Workshop on Gate Insulator,
Tokyo, Japan, 2001.
•International Semiconductor Technology
Conference,
Tokyo, Japan, 2001.
• Material Research Society
High-K Gate Dielectrics workshop,
US, June 2000.
•59th Symp. on Semiconductors & IC Technology,
Tokyo Japan, 2000.
Published
Papers:
1.
SCI-Physics,applied.pdf
2.
SCI-Engineering,
electrical, electronics.pdf
PUBLICATIONS: Journal Articles (244+;
113 in IEEE papers; 49 in AM/APL/JAP/PR)
1.
Albert Chin,
¡§Green Electronic Devices¡XRecent Trends,¡¨
IEEE Electron Device Society Newsletter-
TECHNICAL BRIEFS,
vol. 21, no. 3, pp. 1, 3~4, July 2014. (The 1st TECHNICAL
BRIEFS from Asia reported in IEEE
EDS Newsletter)
2.
C. H. Cheng and
Albert Chin,
¡§Low-Voltage Steep Turn-on p-MOSFET Using Ferroelectric High-£e Gate
Dielectric,¡¨ IEEE Electron Device
Lett., vol. 35, pp. 274-276, Feb. 2014.
3.
C. H. Cheng and
Albert Chin,
¡§Low-Leakage-Current DRAM-like Memory Using a One-Transistor
Ferroelectric MOSFET with a Hf-based Gate Dielectric,¡¨
IEEE Electron Device Lett., vol. 35,
pp. 138-140, Jan. 2014.
4.
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and
Albert Chin,
¡§Charge Carrier Transport Mechanism in High-£e Dielectrics and Their
Based Resistive Memory Cells,¡¨ Optoelectronics, Instrumentation &
Data Processing, vol. 50, No. 3, pp. 310¡V314, July 2014. (English
version of Russian journal ¡¥Autometria¡¦)
5.
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and
Albert Chin,
¡§Evolution of the conductivity type in Germania by varying the
stoichiometry,¡¨ Appl. Phys. Lett., vol. 103, p. 232904 (3 pages),
Dec. 2013.
6.
K. I. Chou, C. H. Cheng, Z. W. Zheng, Ming Liu and
Albert Chin,
¡§Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate with
Excellent Resistance Distribution,¡¨ IEEE
Electron Device Lett., vol. 34, pp. 505-507, Apr. 2013.
7.
C. C. Liao, T. C. Ku, M. H. Lin, L. Zeng,
J. F. Kang, X. Y. Liu, and
Albert Chin,
¡§Metal-Gate/High-£e/Ge nMOS at Small CET with Higher Mobility than SiO2/Si
at Wide Range Carrier Densities,¡¨ IEEE
Electron Device Lett., vol. 34, pp. 163-165, Feb. 2013.
8.
C. H. Cheng and
Albert Chin,
¡§Evaluation of Temperature Stability of Trilayer Resistive Memories
Using Work-Function Tuning,¡¨ Appl. Phys. Express, vol. 6, p.
041203, Apr. 2013.
9.
Albert Chin,
¡§Ge technology beyond Si CMOS,¡¨
Materials Science &
Engineering,
vol. 41, p. 012002 (6 pages), 2012 (European Materials
Research Society).
10.
C. H. Cheng, K. I. Chou,
and Albert Chin,
¡§Achieving low
sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate
stack,¡¨
Solid-State Electronics, vol. 82, pp. 111-114, 2013.
11.
Z. W. Zheng, T. C. Ku, M. Liu, and
Albert Chin,
¡§Ohmic contact on
n-type Ge using Yb-germanide,¡¨
Appl. Phys. Lett., vol. 101, p. 223501 (3 pages), 2012.
12.
S. L. Liu, M. H. Wu, and
Albert Chin,
¡§Design of a CMOS T/R
Switch with High Power Capability: Using Asymmetric Transistors,¡¨
IEEE Microwave & Wireless Components
Lett., vol. 22, pp. 645-647, Dec. 2012.
13.
S. L. Liu, K. H. Chen, and
Albert Chin,
¡§A Dual-Resonant
Mode 10/22-GHz VCO With a Novel Inductive Switching Approach,¡¨
IEEE
Trans.
Microwave Theory Tech.,
vol. 60, pp. 2165-2177, July 2012.
14.
S. L. Liu, X.
C. Tian, Yue Hao, and Albert Chin, ¡§A Bias-Varied Low-Power
K-band VCO in 90 nm CMOS Technology,¡¨
IEEE Microwave & Wireless Components Lett.,
vol. 22, pp. 321-323, May 2012.
15.
C. Y. Tsai, T. L. Wu, and
Albert Chin,
¡§High-Performance GaN MOSFET with High-£e LaAlO3/SiO2
Gate Dielectric,¡¨ IEEE Electron
Device Lett., vol. 33, pp. 35-37, Jan. 2012.
16.
D. R. Islamov, V. A. Gritsenko, C. H. Cheng, and
Albert Chin,
¡§Bipolar
conductivity in nanocrystallized TiO2,¡¨
Appl. Phys. Lett., vol. 101, p. 032101 (2 pages), July 2012.
17.
A. V. Shaposhnikov, T. V. Perevalov, V. A. Gritsenko, C.
H. Cheng, and Albert
Chin, ¡§Mechanism
of GeO2 resistive switching based on the multi-phonon
assisted tunneling between traps,¡¨
Appl. Phys. Lett., vol. 100, p. 243506 (3 pages), June 2012.
18.
C. Y. Tsai, and
Albert Chin,
¡§High-Performance Charge-Trapping Flash Memory Device With an Ultrathin
2.5-nm Equivalent-Si3N4-Thickness Trapping Layer,¡¨
IEEE Trans. Electron Device, vol.
59, pp. 252-254, Jan. 2012.
19.
C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, and
Albert Chin,
¡§Long Endurance Nano-Crystal TiO2 Resistive Memory Using TaON
Buffer Layer,¡¨ IEEE Electron Device
Lett., vol. 32, pp. 1749-1751, Dec. 2011.
20.
D. R. Islamov, V. A. Gritsenko, A. V. Rzhanov, C. H.
Cheng, and Albert Chin,
¡§Bipolar Conductivity in Amorphous HfO2,¡¨ Appl. Phys. Lett.,
vol. 99, p. 072109 (3 pages), Aug. 2011.
21.
C. H. Cheng, F. S. Yeh
and
Albert Chin,
¡§Low-Power High-Performance Non-Volatile Memory on Flexible Substrate
with Excellent Endurance,¡¨ Adv.
Mater.,
vol. 23, Issue 7, pp. 902-905, Feb. 15, 2011. (Impact
Factor =
13.877)
22.
W. B. Chen, B. S. Shie and
Albert Chin,
¡§Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing,¡¨
IEEE Electron Device Lett., vol. 32,
pp. 449-451, April 2011.
23.
C. Y. Tsai, T. H. Lee, and
Albert Chin,
¡§Arsenic-Implanted HfON Charge-Trapping Flash Memory with Large Memory
Window and Good Retention,¡¨ IEEE
Electron Device Lett., vol. 32, pp. 381-383, March 2011.
24.
C. H. Cheng,
Albert Chin
and F. S. Yeh, ¡§Ultra-Low Switching Energy Ni/GeOx/HfON/TaN
RRAM,¡¨ IEEE Electron Device Lett.,
vol. 32, pp. 366-368, March 2011.
25.
C. H. Cheng,
Albert Chin
and F. S. Yeh, ¡§Novel Stacked GeO/SrTiOx Resistive Memory
with Ultra-Low Resistance Currents,¡¨ Appl. Phys. Lett., vol. 98,
p.
052905, Feb.
2011.
26.
C. H. Cheng, P.C. Chen, S.L. Liu, T.L. Wu, H.H. Hsu,
Albert Chin,
F.S. Yeh, ¡§Bipolar switching characteristics of low-power GeO resistive
memory,¡¨ Solid-State Electronics, vol. 62, pp. 90-93, Aug. 2011.
27.
C. Y. Tsai, C. H. Cheng, T. Y. Chang, K. Y. Chou,
Albert Chin,
and F. S. Yeh, ¡§Size-Dependent Trapping Effect in Nano-Dot Non-Volatile
Memory,¡¨ ECS Trans. 41, no. 3, pp. 121, 2011.
28.
S. L. Liu, H. M. Chang, T. Chang, H. L. Kao, C. H. Cheng,
and Albert Chin,
¡§The Reliability Study and Device Modeling for p-HEMT Microwave Power
Transistors,¡¨ ECS Trans. 41, no. 6, pp. 175-187, 2011.
29.
W. B. Chen, C. H. Cheng, and
Albert Chin, ¡§High
Performance Gate-First Epitaxial Ge n-MOSFETs on Si with LaAlO3
Gate Dielectrics,¡¨ IEEE Trans.
Electron Devices, vol. 57, pp.
3525-3530, Dec. 2010.
30.
C. Y. Tsai, T. H. Lee, C. H. Cheng,
Albert Chin,
and Hong Wang, ¡§Highly scaled charge-trapping layer of ZrON nonvolatile
memory device with good retention,¡¨ Appl. Phys. Lett., vol. 97,
p. 213504, Nov.
2010.
31.
W. B. Chen, C. H. Wu, B. S. Shie, and
Albert Chin,
¡§Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs
Using Laser Annealing,¡¨ IEEE Electron
Device Lett., vol. 31, pp. 1184-1186, Nov. 2010.
32.
C. H. Cheng,
Albert Chin
and F. S. Yeh, ¡§Ultra Low Power Ni/GeO/STO/TaN Resistive Switching
Memory,¡¨ IEEE Electron Device Lett.,
vol. 31, pp. 1020-1022, Sept. 2010.
33.
C. Y. Tsai, K. C. Chiang, S. H. Lin, K. C.
Hsu, C. C. Chi, and
Albert Chin,
¡§Improved Capacitance Density and Reliability of High-£e Ni/ZrO2/TiN
MIM Capacitors using Laser Annealing Technique,¡¨
IEEE Electron Device Lett., vol. 31,
pp. 749-752, July 2010.
34.
N. C. Su, S. J. Wang, C. C. Huang, Y. H. Chen, H. Y.
Huang,
C. K. Chiang, and
Albert Chin,
¡§Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small
Subthreshold Swing,¡¨ IEEE Electron
Device Lett., vol. 31, pp. 680-682, July 2010.
35.
S. L. Liu, K. H. Chen, T. Chang, and
Albert Chin,
¡§A Low-Power K-Band CMOS VCO with Four-Coil Transformer Feedback,¡¨
IEEE Microwave & Wireless Components Lett., vol. 20, no. 8,
pp. 459-461, Aug. 2010.
36.
M. Jiang, L. M. Chang, and Albert Chin, ¡§Design
of Dual-Passband Microstrip Bandpass Filters With Multi-Spurious
Suppression,¡¨ IEEE Microwave & Wireless
Components Lett., vol. 20, no. 4, pp. 199-201, April 2010.
37.
N. C. Su, S. J. Wang, and
Albert Chin,
¡§A Nonvolatile InGaZnO Charge Trapping Engineered Flash Memory with Good
Retention Characteristics,¡¨
IEEE
Electron Device Lett.,
vol. 31, pp. 201-203, March 2010.
38.
W. B. Chen and
Albert Chin,
¡§High Performance
of Ge n-MOSFETs Using SiO2 Interfacial Layer and TiLaO
Gate Dielectric,¡¨
IEEE Electron
Device Lett.,
vol. 31, pp. 80-82, Jan. 2010.
39.
C. H. Cheng,
C.
K. Deng, H. H. Hsu, P. C. Chen, B. H. Liou,
Albert Chin,
and F. S. Yeh,
¡§Lanthanide-Oxides Mixed TiO2 Dielectrics for High-k MIM Capacitors,¡¨
J. Electrochem.
Soc.,
vol. 157, no. 8, pp. H821-H824, 2010.
40.
C. H. Cheng, C. C. Huang, H. H. Hsu, P. C. Chen, K. C.
Chiang, Albert Chin,
and F. S. Yeh, ¡§A study on frequency-dependent voltage nonlinearity of
SrTiO3 RF capacitor,¡¨ Electrochem. Solid-State Lett.
vol. 13, no. 12, H436-H438, 2010.
41.
C. H. Cheng, H. H. Hsu, I. J. Hsieh, C. K. Deng,
Albert Chin,
and F. S. Yeh, ¡§High-k TiCeO MIM Capacitors with a Dual-Plasma Interface
Treatment,¡¨ Electrochem. Solid-State Lett., vol. 13, no. 4, pp.
H112-H115, 2010.
42.
N. C. Su, S. J. Wang, and
Albert Chin,
¡§A Low Operating Voltage ZnO Thin Film Transistor Using a High-k
HfLaO Gate Dielectric,¡¨ Electrochem. Solid-State Lett., vol. 13,
no. 1, pp. H8-H11, Jan. 2010.
43.
C. H. Cheng, H. H. Hsu, W. B. Chen,
Albert Chin,
and F. S. Yeh, ¡§Characteristics of Cerium Oxide for
Metal-Insulator-Metal Capacitors,¡¨ Electrochem. Solid-State Lett.,
vol. 13, no. 1, pp. H16-H19, Jan. 2010.
44.
C. H. Cheng, H. H. Hsu, P. C. Chen, B. H. Liou,
A. Chin,
and F. S. Yeh, ¡§Higher-£e titanium dioxide incorporating LaAlO3
as dielectrics for MIM capacitors,¡¨ Solid-State Electronics, vol. 54,
pp. 646-649, June 2010.
45.
T. Chang, H. L. Kao, Y. J. Chen, and
Albert Chin,
¡§Improved RF Power Characteristics of CMOS-Compatible Asymmetric-
Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor,¡¨
Jpn. J. Appl. Phys.,
vol. 49, 034201 (5 pages), 2010.
46.
T. Chang, H. L. Kao, S. L. Liu,
J. D. S. Deng,
K. Y. Horng and
Albert Chin,
¡§Radio Frequency Power Performance Enhancement for Asymmetric-
Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect Transistors
on SiC-Substrate,¡¨
Jpn. J. Appl. Phys.,
vol. 49, 014104 (4 pages), 2010.
47.
S. H. Lin, K. C. Chiang, F. S. Yeh, and
Albert Chin,
¡§Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors
Using TiO2/ZrO2 Dielectrics,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 1287-1289, Dec. 2009.
48.
N. C. Su, S. J. Wang, and
Albert Chin,
¡§High Performance InGaZnO Thin-Film Transistors using HfLaO Gate
Dielectric,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 1317-1319, Dec. 2009.
49.
W. B. Chen and
Albert Chin,
¡§Interfacial Layer
Dependence on Device Property of High-k
TiLaO Ge/Si N-Type
Metal-Oxide-Semiconductor Capacitors at Small Equivalent- Oxide
Thickness,¡¨
Appl. Phys.
Lett., vol. 95,
p. 212105, Nov.
2009.
50.
S. H. Lin, C. H. Cheng, W. B. Chen, F. S. Yeh, and
Albert Chin,
¡§Low Threshold Voltage TaN/LaTiO n-MOSFETs with Small EOT,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 999-1001, Sept. 2009.
51.
M. F. Chang, P. T. Lee, and
Albert Chin,
¡§Low Threshold Voltage MoN/HfAlO/SiON p-MOSFETs with 0.85-nm EOT,¡¨
IEEE Electron Device Lett., vol. 30, pp. 861-863, Aug. 2009.
52.
S. H. Lin, K. C. Chiang,
Albert Chin
and F. S. Yeh, ¡§High Density and Low Leakage Current MIM Capacitor Using
Stacked TiO2/ZrO2 Insulators,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 715-717, July 2009.
53.
S. H. Lin, C. H. Cheng, W. B. Chen, F. S.
Yeh, and Albert Chin,
¡§Low Threshold Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating
Low-Temperature-Formed Shallow Junctions,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 681-683, June 2009.
54.
M. F. Chang, P. T. Lee,
S. P. McAlister, and
Albert Chin, ¡§Small
Sub-threshold-Swing and Low-Voltage, Flexible Organic Thin Film
Transistors which use HfLaO as the Gate Dielectric,¡¨
IEEE Electron
Device Lett.,
vol. 30, pp. 133~135, Feb. 2009.
55.
S. H. Lin, S. L. Liu, F. S. Yeh, and
Albert Chin,
¡§Low Vt TaN/HfLaO n-MOSFETs Using Low Temperature
Formed Source-Drain Junctions,¡¨
IEEE
Electron Device Lett.,
vol. 30, pp. 75-77, Jan. 2009.
56.
Albert Chin,
M. F. Chang, S. H. Lin, W. B. Chen, P. T. Lee, F. S. Yeh, C. C. Liao,
M.-F. Li, N. C. Su and S. J. Wang, ¡§Flat
Band Voltage Control on Low Vt Metal-Gate/High-k
CMOSFETs with small EOT,¡¨
Microelectronics Engineering, vol. 86, pp. 1728¡V1732, July 2009.
57.
Albert Chin,
S. H. Lin, K. C. Chiang,
and F. S. Yeh, ¡§Improved Device Characteristics in
Charge-Trapping-Engineered Flash Memory Using High-k
Dielectrics,¡¨
ECS Trans., vol. 25, no. 6, pp. 447-455, 2009.
58.
C. C. Huang, C. H. Cheng, B. H. Liou, F. S. Yeh, and
Albert Chin,
¡§Effect of Ta2O5 Doping on
Electrical Characteristics of SrTiO3 Metal¡VInsulator¡VMetal
Capacitors,¡¨ Jpn. J. Appl. Phys., vol. 48, pp. 081401 (6 pages),
2009.
59.
T. Chang, H. L. Kao, S. P. McAlister, K.Y. Horng and
Albert Chin,
¡§Improved RF Power
Performance in a 0.18-mm
MOSFET which uses an Asymmetric Drain Design,¡¨
IEEE Electron Device Lett., vol. 29, pp. 1402-1404, Dec.
2008.
60.
P. H. Tsai, K. S. Chang-Liao, D. W. Yang, Y. B. Chung, T.
K. Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, M. J. Tsai, and
Albert Chin,
¡§Crucial Integration of High Work-Function Metal Gate and High-k
Blocking Oxide on Charge-Trapping Type Flash Memory Device,¡¨ Appl.
Phys. Lett., vol. 93(25), p. 252902, Dec. 2008.
61.
M. F. Chang, P. T. Lee, S. P. McAlister, and
Albert Chin,
¡§A Flexible
Organic Pentacene Non-volatile Memory Incorporating High-k Dielectric
Layers,¡¨
Appl. Phys. Lett., vol. 93(23), p. 233302, Dec. 2008.
62.
C. H. Cheng,
H. C. Pan, C. P.
Chou, C. N. Hsiao, J. Hu, M. Hwang, T. Arikado,
S. P. McAlister, and Albert Chin,
¡§Improvement of the Performance of TiHfO MIM Capacitors
by Using a Dual Plasma Treatment of the Lower Electrode,¡¨
IEEE Electron Device Lett., vol. 29, pp. 1105-1107, Oct.
2008.
63.
C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P.
Chou, F. S. Yeh, J. Hu, M. Hwang, T. Arikado,
S. P. McAlister, and
Albert Chin,
¡§The 300oC-Processed High Density TiO2 MIM
Capacitors with Low Leakage Current,¡¨ IEEE
Electron Device Lett., vol. 29, pp. 845-847, Aug. 2008.
64.
C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N.
Hsiao, C. P. Chou, F. S. Yeh, and
Albert Chin,
¡§High Performance MIM Capacitors Using a High-k
TiZrO Dielectric,¡¨
J. Electrochem. Soc.,
vol. 155, pp. G295-298, Dec. 2008.
65.
H.
J. Yang, Albert Chin,
S. H. Lin, F. S. Yeh, and S. P. McAlister, ¡§Improved High Temperature
Retention for Charge-Trapping Memory by Using Double Quantum Barriers,¡¨
IEEE Electron Device Lett., vol. 29, pp. 386-388, April 2008.
66.
S. H. Lin, H. J. Yang, W. B. Chen, F. S. Yeh, S. P.
McAlister, and Albert
Chin, ¡§Improving
the Retention and Endurance Characteristics of Charge-Trapping Memory by
Using Double Quantum Barriers,¡¨
IEEE Trans.
Electron Device,
vol. 55, pp. 1708-1713, July 2008.
67.
H. J. Yang, C. F. Cheng, W. B. Chen, S. H. Lin, F. S. Yeh
, S. P. McAlister, and
Albert Chin,
¡§Comparison of MONOS Memory Device Integrity when Using Hf1-x-yNxOy
Trapping Layers with different N Compositions,¡¨
IEEE
Trans. Electron Device,
vol. 55, pp. 1417-1423, June 2008.
68.
C. F. Cheng, C. H. Wu, N. C. Su, S. J.
Wang, S. P. McAlister and
Albert Chin,
¡§High Work-Function Ir/HfLaO p-MOSFETs Using Low Temperature
Shallow Junction,¡¨ IEEE Trans.
Electron Device, vol. 55, pp. 838-843, March 2008.
69.
M. C. King, and
Albert Chin,
¡§New Test Structure to
Monitor Contact-to-Poly Leakage in sub-90nm CMOS Technologies,¡¨
IEEE
Trans.
Semiconductor Manufacturing,
vol 21, pp. 244-247, May 2008.
70.
M. F. Chang, P. T. Lee,
S. P. McAlister, and
Albert Chin, ¡§Low
Sub-threshold Swing HfLaO/Pentacene
Organic Thin Film Transistors,¡¨
IEEE Electron
Device Lett.,
vol. 29, pp. 215-217, March 2008.
71.
X. P. Wang, M. -F. Li, H. Y. Yu, J. J. Yang, C. X. Zhu,
A. Y. Du, W.Y. Loh ,S. Biesemans,
Albert Chin,
G. Q. Lo, and D. L. Kwong, ¡§Widely Tunable Work Function TaN/Ru Stacking
Layer on HfLaO Gate Dielectric,¡¨
IEEE
Electron Device Lett.,
vol. 29, pp. 50-53, Jan. 2008.
72.
C. H. Cheng, H. H. Hsu,
C. K. Deng,
Albert Chin,
and C. P. Chou, ¡§Improved Lower Electrode Oxidation of High-k TiCeO
Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment,¡¨ ECS
Trans., vol. 16, no. 5, pp. 323-333, 2008.
73.
C. C. Huang, C. H. Cheng,
Albert Chin,
C. P. Chou, ¡§High Performance Ir/TiPrO/TaN Capacitors forAnalog ICs
Application,¡¨ ECS Trans., vol. 16, no. 5, pp. 341-352, 2008.
74.
C. F. Cheng, C. H. Wu, N. C. Su, S. J. Wang, S. P.
McAlister and Albert
Chin, ¡§HfLaON
n-MOSFETs Using a Low Work Function HfSix Gate,¡¨
IEEE Electron
Device Lett.,
vol. 28, pp. 1092-1094, 2007.
75.
C. H. Cheng, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P.
McAlister, and Albert
Chin, ¡§Improved
High-Temperature Leakage in High Density MIM Capacitors by Using a TiLaO
Dielectric and an Ir Electrode,¡¨
IEEE Electron
Device Lett.,
vol. 28, pp. 1095-1097, 2007.
76.
H. J. Yang,
Albert Chin,
W. J. Chen, C. F. Cheng, W. L. Huang, I. J. Hsieh, and S. P. McAlister,
¡§A Program-Erasable High-k
Hf0.3N0.2O0.5
MIS Capacitor with Good Retention,¡¨ IEEE
Electron Device Lett., vol. 28, pp. 913-915, Oct. 2007.
77.
K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan and C.
N. Hsiao, C. P. Chou, S. P. McAlister,
Albert Chin,
and
H. L. Hwang, ¡§Use of a High
Work-Function Ni Electrode to Improved the Stress Reliability of Analog
SrTiO3 Metal-Insulator-Metal Capacitors,¡¨
IEEE Electron Device Lett., vol. 28,
pp.694-696, Aug. 2007.
78.
C. H. Wu, B. F. Hung,
Albert Chin,
S. J. Wang, X. P. Wang, M.-F. Li, C. Zhu, F. Y. Yen, Y. T. Hou, Y. Jin,
H. J. Tao, S. C. Chen and M. S. Liang, ¡§High Temperature Stable HfLaON
p-MOSFETs with High Work Function Ir3Si
Gate,¡¨
IEEE Electron
Device Lett.,
vol. 28, pp.292-294, April 2007.
79.
K. C. Chiang, C. H. Cheng, H. C. Pan and C. N. Hsiao, C.
P. Chou, Albert Chin,
and
H. L. Hwang, ¡§High Temperature
Leakage Improvement in Metal-Insulator-Metal Capacitors by
Work-Function Tuning,¡¨ IEEE Electron
Device Lett., vol. 28, pp. 235-237, March 2007.
80.
M. C. King, T. Chang, and
Albert Chin,
¡§RF Power
Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design,¡¨
IEEE Microwave & Wireless Components
Lett., vol. 17, pp. 445-447, June 2007.
81.
X. P. Wang, H. Y. Yu, M. -F. Li, C. X. Zhu,
S. Biesemans, Albert
Chin,
Y. Y. Sun, Y. P. Feng, A. Lim, Y. C. Yeo, W. Y. Loh, P. Lo and D.-L
Kwong, ¡§Wide Vfb and Vth tunability for metal gated MOS devices with
HfLaO gate dielectrics,¡¨ IEEE
Electron Device Lett., vol. 28, pp.258-260, April 2007.
82.
X. P. Wang, A. Lim, H. Y. Yu, M.-F. Li, C. Ren, W.-Y.
Loh, C. X. Zhu, Albert
Chin, A. D. Trigg,
Y.-C. Yeo, S. Biesemans, D.-L. Kwong, ¡§Work Function Tunability of
Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced
CMOS Devices,¡¨
IEEE
Trans. Electron Device,
no. 11, pp.
2871-2877,
2007.
83.
B. F. Hung, C. H. Wu,
Albert Chin,
S. J. Wang, F. Y. Yen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M.
S. Liang, ¡§High
Temperature Stable IrxSi
Gates with High Work Function on HfSiON p-MOSFETs,¡¨
IEEE Trans.
Electron Device,
vol. 54, no. 2, pp. 257-261, 2007.
84.
K. C. Chiang, C. C. Huang, H. C. Pan and C.
N. Hsiao,
J. W. Lin, I. J. Hsieh,
C. H. Cheng, C. P. Chou, Albert Chin,
H. L. Hwang and S. P. McAlister, ¡§Thermal Leakage Improvement by Using a
High Work-Function Ni Electrode in High-k
TiHfO MIM Capacitors,¡¨ J. Electrochem. Soc., vol. 154, p. G54,
2007; specially selected for the Virtual Journal of Nanoscale Science
& Technology, January 22, 2007 (American Institute of Physics &
American Physical Society)
85.
K. C. Chiang, J. W. Lin, H. C. Pan, C. N. Hsiao, W. J.
Chen, H. L. Kao, I .
J . Hsieh,
and
Albert Chin, ¡§Very
High Density (44 fF/mm2)
SrTiO3 MIM Capacitors for RF Application,¡¨
J. Electrochem. Soc.,
vol. 153, p. H214, 2007.
86.
C. C. Huang, C. H. Cheng,
Albert Chin,
and C. P. Chou, ¡§Leakage Current Improvement of Ni/TiNiO/TaN
Metal-Insulator-Metal Capacitors using Optimized N+ Plasma
Treatment and Oxygen Annealing,¡¨ J. Electrochem. Soc. Lett.,
vol., p., 2007.
87.
C. H. Cheng, K. C. Chiang, H. C. Pan, C. N.
Hsiao, C. P. Chou, S. P. McAlister, and
Albert Chin,
¡§Improved Stress Reliability of Analog TiHfO Metal¡VInsulator¡VMetal
Capacitors Using High-Work-Function Electrode,¡¨ Jpn. J. Appl. Phys.,
vol. 46, pp. 7300-7302, 2007.
88.
B. F. Hung, C. C. Chen, H. L. Kao, and
Albert Chin,
¡§High-Performance Radio Frequency Passive Devices on Plastic Substrates
for Radio Frequency Integrated Circuit Application,¡¨ Jpn. J. Appl.
Phys., vol. 46, pp. 2758-2760, 2007.
89.
H. L. Hwang, Y. K. Chiou, C. H. Chang, C.
C. Wang, K. Y. Lee, T. B. Wu, J. Kwo, M. Hong, K. S. Chang-Liao, C. Y.
Lu, C. C. Lu, Y. Y. Kyi,
Albert Chin,
C. H. Chen, J. Y. Lee, and F. C. Chiu, ¡§Advance in Next Century Nano
CMOSFET Research and Its Future Prospects for Industry¡¨ J. Vacuum
Science Tech., Nov. (2007).
90.
M. C. King, C. F. Chang, C. H. Chen, H. J. Lin, C. M.
Huang, Albert Chin,
¡§Comparison of Integrated MiM Process with Cu Dual Damascene in CMOS
MS/RF Technology,¡¨ J. Electrochem. Soc., vol. 153, p. G1032,
2006.
91.
C. H. Wu, B. F. Hung,
Albert Chin,
S. J. Wang, F. Y. Yen,
Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang,
¡§HfSiON n-MOSFETs Using Low Work Function HfSix Gate,¡¨
IEEE Electron
Device Lett.
27, no. 9, pp. 762-764, 2006.
92.
C. C. Huang, K. C. Chiang,
H. L. Kao,
Albert Chin,
and W. J. Chen, ¡§RFIC
TaN/SrTiO3/TaN MIM Capacitors with
35
fF/mm2
Capacitance Density,¡¨
IEEE Microwave &
Wireless Components Lett.,
vol. 16, no., pp. 493-495 (2006).
93.
C. H. Wu, B. F. Hung,
Albert Chin,
S. J. Wang, F. Y. Yen and Y. T. Hou, Y. Jin, H. J.
Tao, S. C. Chen, and M. S. Liang, ¡§HfAlON n-MOSFETs Incorporating Low
Work Function Gate Using Ytterbium-Silicide,¡¨
IEEE Electron
Device Lett.
27, no. 6, pp. 454-456, 2006.
94.
K. C. Chiang, C. C. Huang, G. L. Chen, W. J. Chen, H. L.
Kao , Y. H. Wu, Albert Chin and S. P. McAlister, ¡§High Performance SrTiO3
Metal-Insulator-Metal Capacitors for Analog Applications,¡¨
IEEE Trans.
Electron Device
53, no. 9,
pp. 2312-2319, 2006.
95.
H. L. Kao,
Albert Chin,
C. C. Liao, C. C. Chen, S. P. McAlister
and C. C. Chi, ¡§Electrical Stress Effects and Device Modeling of 0.18mm
RF MOSFETs,¡¨
IEEE Trans.
Electron Device
53, no. 4,
pp. 636-642, 2006.
96.
C. H. Wu, D. S. Yu,
Albert Chin,
S. J. Wang, M.-F. Li, C. Zhu, B. F. Hung, and S. P. McAlister, ¡§High
Work Function IrxSi Gates on HfAlON p-MOSFETs,¡¨
IEEE Electron
Device Lett.
27, no. 2, pp. 90-92, 2006.
97.
X. P. Wang, M. F. Li, C. Ren,
X. F. Yu, C. Shen, H. H. Ma,
Albert Chin,
C. X. Zhu,
J. Ning, M. B. Yu, and D. L. Kwong, ¡§Tuning Effective Metal Gate Work
Function by a Novel Gate Dielectric HfLaO for nMOSFETs,¡¨
IEEE Electron
Device Lett.
27, no. 1, pp. 31-33, 2006.
98.
C. H. Lai, C. H. Wu,
Albert Chin,
S. J. Wang, and S. P. McAlister, ¡§A Novel Quantum Trap MONOS Memory
Device using AlN,¡¨
J. Electrochem. Soc.,
vol. 153, pp.
G738-G741,
Aug. 2006.
99.
D. S. Yu, H. L. Kao,
Albert Chin,
and S. P.
McAlister,
¡§Performance
and potential of germanium on insulator field-effect transistors,¡¨
J. Vacuum Science
Tech. A, vol.
24, no. 3, pp. 690-693, 2006.
100.
X. P. Wang, M.F. Li,
Albert Chin,
C.X. Zhu, J. Shao, W. Lu, X.C. Shen, X.F. Yu, Ren Chi, C. Shen, A.C.H.
Huan, J.S. Pan, A.Y. Du, P. Lo, D.S.H. Chan, and D. L. Kwong
¡§Physical
and electrical characteristics of high-k gate dielectric Hf(1-x)LaxOy,¡¨
Solid-State
Electron, vol.
50, pp. 986-991, 2006.
101.
H. L. Kao,
Albert Chin,
C. C. Liao, Y.
Y. Tseng, S. P. McAlister, and C. C. Chi
¡§Strain Enhanced DC-RF Performance of 0.13 um nMOSFETs on a Flexible
Plastic Substrate,¡¨ Electronics Letters, vol. 42, no. 14, pp. 827-829,
2006.
102.
Albert Chin,
C. Chen, D. S. Yu, H. L. Kao, S. P. McAlister and C. C. Chi, ¡§Comparison
of Germanium-on-Insulator CMOS with InGaAs MOSFETs,¡¨ Materials
Science in Semiconductor Processing vol. 9, pp. 711-715, 2006 (European
Materials Research Society).
103.
M. F. Li, C. Zhu, C. Shen, X. F. Yu, Y. P. Feng, Y. C.
Yeo, Albert Chin,
D. L. Kwong, S. H. Wang, A. Y. Du and G. Samudra, ¡§New
Insights in Hf Based High-k Gate Dielectrics in MOSFETs,¡¨ ECS Trans.,
vol. 1, no. 5, pp. 717-728, 2006.
104.
C. C. Chen, J. T. Kuo, M. Jiang, and
A. Chin,
¡§Study on Parallel
Coupled-Line Microstrip Filter in Broadband,¡¨
Microwave & Optical Tech.
Lett.,
vol. 48, no.2, pp. 373-375, 2006.
105.
C. C. Chen, H. L. Kao, K. C. Chiang, and
Albert Chin,
¡§A Parallel Coupled-Line Filter Using VLSI Backend Interconnect with
High Resistivity Substrate,¡¨ Int. J. IR & MMW, FEB. 2006.
106.
C. C. Chen, H. L. Kao, C. C. Liao,
Albert Chin,
Sean P. McAlister1 and C. C. Chi, ¡§AC Power Loss and Signal Coupling in
VLSI Backend Interconnects,¡¨ JJAP.
vol. 45, no. 4B, pp.
2992-2996,
2006.
107.
H. L. Kao, B. F. Hung,
Albert Chin,
J. M. Lai, C. F. Lee, S. P. McAlister, and C. C. Chi, ¡§Very Low
Noise RF nMOSFETs on Plastic by Substrate-Thinning and Wafer Transfer,¡¨
IEEE Microwave &
Wireless Components Lett.,
vol. 15, no. 11, pp. 757-759 (2005).
108.
Albert Chin
and S. P.
McAlister,
¡§The Power
of Functional Scaling: Beyond the Power Consumption Challenge and the
Scaling Roadmap¡¨ IEEE Circuit
& Devices Magazine, vol. 21, no. 1, pp. 27-35, Jan/Feb. 2005.
109.
T. Low, M. F. Li, G. Samudra, Y.-C. Yeo, C.
Zhu,
A. Chin,
D.-L. Kwong, ¡§Modeling Study of the Impact of Surface Roughness on
Silicon and Germanium UTB MOSFETs,
IEEE
Trans. Electron Device,
vol. 52, no. 11, pp.
2430 - 2439, 2005.
110.
K. C. Chiang, C. H. Lai,
Albert Chin,
T. J. Wang, H. F. Chiu, J. R. Chen, S. P. McAlister,
and C. C. Chi, ¡§Very High-Density (23 fF/mm2)
RF MIM Capacitors Using high-k
TaTiO as the Dielectric,¡¨
IEEE Electron
Device Lett.
26, no. 10, pp. 728-730, 2005.
111.
S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C.
Zhu, A. Chin
and Dim-Lee Kwong, ¡§Metal-insulator-metal RF bypass capacitor using
niobium oxide (Nb2O5) with HfO2/Al2O3
barriers,¡¨
IEEE
Electron Device Lett.
26, no. 9, pp. 625-627, 2005.
112.
K. C. Chiang, C. C. Huang,
Albert Chin,
W. J. Chen, S. P. McAlister, H. F.
Chiu, J.-R. Chen, and C. C.
Chi, ¡§High-k
ƒnIr/TiTaO/TaN
Capacitors Suitable for Analog IC Applications,¡¨
IEEE Electron
Device Lett.
26, no. 7, pp. 504-506, 2005.
113.
H. L. Kao,
Albert Chin,
B. F. Hung , C. F. Lee, J. M. Lai, S. P. McAlister, G.
S. Samudra, Won Jong Yoo, and C. C. Chi, ¡§Low Noise RF MOSFETs on Flexible Plastic
Substrates,¡¨
IEEE Electron
Device Lett.
26, no. 7, pp. 489-491, 2005.
114.
D. S. Yu , C. C. Liao, C. F. Cheng,
A. Chin,
M. F. Li, and S. P. McAlister, ¡§The
Effect of IrO2-IrO2/Hf/LaAlO3 Gate
Dielectric on the Bias-Temperature Instability of 3D GOI CMOSFETs,¡¨IEEE
Electron Device Lett.
26, no. 6, pp. 407-409, 2005.
115.
B. F. Hung, K. C. Chiang, C. C. Huang,
A. Chin,
and S. P.
McAlister, ¡§High-Performance Poly-Silicon Thin Film Transistors
Incorporating LaAlO3
as the Gate Dielectric,¡¨
IEEE
Electron Device Lett.
26, no. 6, pp. 384-386, 2005.
116.
C. H. Lai, B. F. Hung,
A. Chin,
W. J. Yoo, M. F. Li, C. Zhu, S. P. McAlister, and D. L. Kwong, ¡§A
novel program-erasable high-k
AlN capacitor,¡¨
IEEE
Electron Device Lett.
26, pp. 148 - 150, March 2005.
117.
D. S. Yu,
A. Chin,
C. C. Liao, C. F. Lee, C. F. Cheng, M. F. Li, W. J. Yoo, and S.
P. McAlister,
¡§3D
Metal-Gate/High-k/GOI
CMOSFETs on 1-Poly-6-Metal 0.18-mm
Si Devices,¡¨
IEEE
Electron Device Lett.
26, no. 2, pp. 118-120, 2005.
118.
S. Zhu, R. Li, S. J. Lee, M. F. Li, A. Du,
J. Singh, C. Zhu, A.
Chin, and D. L.
Kwong, ¡§Germanium pMOSFETs With Schottky-Barrier Germanide S/D, High-k
Gate Dielectric
and Metal Gate,¡¨
IEEE
Electron Device Lett.
26, no. 2, pp. 81-83, 2005.
119.
J. G. Mihaychuk, M. W. Denhoff, S. P.
McAlister, W. R. McKinnon, and
A. Chin,
¡§Broad-spectrum light emission at microscopic breakdown sites in
metal-insulator-silicon tunnel diodes,¡¨ J. Appl. Phys., vol. 98,
no. 5, pp. 054502-054502-9, 2005.
120.
Y. Q. Wang, J. H. Chen, W. J. Yoo, Y. C.
Yeo, A. Chin,
and A. Y. Du, ¡§Formation of dual-phase HfO2-HfxSi1-xO2
dielectric and its application in memory devices,¡¨ J. Appl.
Phys., vol. 98, no. 1, pp. 013536-013536-5, 2005.
121.
D. S. Yu, C. C. Liao , C. F. Lee , C. F.
Cheng , A. Chin,
S. P. McAlister , C.C. Chen, ¡§Reducing AC Power Consumption by
Three-Dimensional Integration of Ge-On-Insulator CMOS on 1-Poly-6-Metal
0.18 £gm Si MOSFETs,¡¨ J. Electrochem. Soc., vol. 152, pp.
G684-687, Aug. 2005.
122.
C. C. Liao, D. S. Yu, C. F. Cheng, K. C. Chiang, and
A. Chin,
¡§Bias-Temperature Instability on Fully-Silicided-Germanided Gates/high-k
Al2O3
CMOSFETs,¡¨ J. Electrochem.
Soc., vol.
152,
pp. G452-455, Aug. 2005.
123.
M. F. Li, C. Zhu, C. Shen, X. F. Yu, Y. P. Feng, Y. C.
Yeo, A. Chin,
D. L. Kwong, A. Y. Du, and G. Samudra, ¡§New Insights in Hf Based High-k
Gate Dielectrics in MOSFETs,¡¨
ECS Trans.
1,
no. 5, 717, 2006.
124.
C. C. Chen, J. T. Kuo, M. Jiang,
A. Chin,
and S. P. McAlister, ¡§A
Fully Planar Microstrip Coupled-Line Coupler with a High Coupling
Level,¡¨
Microwave &
Optical Tech. Lett.,
2005.
125.
S. J. Ding, H. Hu, C. Zhu, M. F. Li, S. J. Kim, B. J.
Cho, D. S. H. Chan, M. B. Yu, A. Y. Du,
A. Chin,
D.-L. Kwong, ¡§Evidence
and Understanding of ALD HfO2-Al2O3
Laminate MIM Capacitors Outperforming HfO2-Al2O3
Sandwich Counterparts,¡¨IEEE
Electron Device Lett.
25, no. 10, pp. 681-683, 2004.
126.
N. Wu, Q. Zhang, C. Zhu,
D. S. H. Chan,
A. Du, N. Balasubramanian, M. F. Li,
A. Chin,
J. K. O. Sin,
and D. L. Kwong,
¡§A TaN-HfO2-Ge pMOSFET with novel SiH4 surface
passivation,¡¨
IEEE Electron
Device Lett.
25, no. 9, pp. 631-633, 2004.
127.
D. S. Yu , K. C. Chiang, C. F. Cheng,
A. Chin, C. Zhu, M. F. Li, and Dim-Lee Kwong, ¡§Fully Silicided
NiSi:Hf/LaAlO3/Smart-Cut-Ge-On-Insulator n-MOSFETs With High
Electron Mobility¡¨
IEEE Electron
Device Lett.
25, no. 8, pp. 559-561, 2004.
128.
S. J. Kim, B. J. Cho, M.-F. Li, S.-J. Ding,
C. Zhu, M. B. Yu, B. Narayanan,
A. Chin,
and D.-L. Kwong, ¡§Improvement of voltage linearity in high-k
MIM Capacitors using HfO2-SiO2 stacked
dielectric,¡¨
IEEE Electron
Device Lett.
25, no. 8, pp. 538-540, 2004.
129.
S. Zhu, J. Chen, M.-F. Li,
S. J. Lee,
J. Singh,
C. X. Zhu,
A. Du, C.H. Tung,
A. Chin,
and D. L. Kwong,
¡§N-type Schottky Barrier Source/Drain MOSFET using Ytterbium Silicide,¡¨
IEEE Electron
Device Lett.
25, no. 8, pp. 565-567, 2004.
130.
X. F. Yu, C. X. Zhu, M. F. Li,
A. Chin,
M. B. Yu, A. Y. Du, and D. L. Kwong, ¡§Mobility
enhancement in TaN metal-gate MOSFETs using Tantalum incorporated HfO2
gate dielectric,¡¨
IEEE Electron
Device Lett.
25, no. 7, pp. 501-503, 2004.
131.
S.-J. Ding, H. Hu, C. Zhu, S. J. Kim, X.
Yu, M.-F. Li, B. J. Cho, D.S.H Chan, M. B. Yu, S. C. Rustagi,
A. Chin,
and D.-L. Kwong, ¡§RF, DC, and Reliability Characteristics of ALD HfO2-Al2O3
Laminate MIM Capacitors for Si RF IC Applications,¡¨
IEEE Trans. Electron Devices,
51, no. 6, pp. 886-894 (2004).
132.
S. Zhu, H. Y. Yu, S. J. Whang, J. H. Chen,
C. Shen, C. Zhu, S. J. Lee, M. F. Li, DSH Chan, W. J. Yoo, A. Du, C. H.
Tung, J. Singh, A. Chin,
and D. L. Kwong, ¡§Schottky-Barrier S/D MOSFETs with High-K Gate
Dielectrics and Metal Gate Electrode,¡¨
IEEE
Electron Device Lett.
25, no. 5, pp. 268-270 (2004).
133.
D. S. Yu, C. H. Huang,
A. Chin,
C. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong, ¡§Al2O3/Ge-On-Insulator
n- and p-MOSFETs with Fully NiSi and NiGe Dual Gates,¡¨
IEEE Electron
Device Lett.
25, no. 3, pp. 138-140 (2004).
134.
C. Y. Lin,
A. Chin,
Y. T. Hou, and M.
F. Li, S. P. McAlister, and D. L. Kwong, ¡§Light
emission near 1.3
mm
using ITO/Al2O3/Si0.3Ge0.7/Si
tunnel diodes,¡¨ IEEE Photonics Tech.
Lett. 16, no. 1, pp. 36-38 (2004).
135.
C. L. Sun, S. Y. Chen, C. C. Liao, and
A. Chin,
¡§Low Voltage Lead Titanate/Si One-Transistor Ferroelectric Memory with
Good Device Characteristics,¡¨ Appl. Phys. Lett., vol. 85, no. 20,
pp. 4726-4728, Nov. 2004.
136.
N. Wu, Q. Zhang, C. Zhu,
DSH Chan,
M.F. Li,
N. Balasubramanian,
A. Chin, and D. L.
Kwong, ¡§Alternative surface passivation process for TaN/HfO2/Ge
metal-oxide- semiconductor capacitors,¡¨
Appl. Phys. Lett.,
vol. 85, no. 18, pp. 4127-4130, Nov. 2004.
137.
X. F. Yu, C. Zhu, M. F. Li,
A. Chin,
A. Y. Du, W. D. Wang, and D. L. Kwong, ¡§Electrical characteristics and
suppressed boron penetration behavior of thermally stable HfTaO gate
dielectrics with polycrystalline-silicon gate,¡¨
Appl. Phys. Lett.,
vol. 85, no. 14, pp. 2893-2895, Oct. 2004.
138.
T. Low, M. F. Li, C. Shen, Y. C. Yeo, Y. T. Hou, C. Zhu,
A. Chin,
and D. L. Kwong ¡§Electron mobility in Ge and strained-Si channel
ultrathin-body metal-oxide semi conductor field-effect transistors,¡¨
Appl. Phys. Lett.,
vol. 85, no. 12, pp. 2402-2404, Sept. 2004.
139.
N. Wu, Q.
Zhang, C. Zhu, C. C. Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, B. J.
Cho, A. Chin,
D. L. Kwong, A. Y.
Du, C. H. Tung,and N. Balasubramanian, ¡§Effect
of surface NH3 anneal on the physical and electrical
properties of HfO2 films on Ge substrate,¡¨ Appl. Phys.
Lett., vol 84, no. 19, pp. 3741-3743, 2004.
140.
C. C. Liao, C. F. Cheng, D. S. Yu and
Albert Chin,
¡§The copper contamination effect on Al2O3
gate dielectric on Si,¡¨ J. Electrochem. Soc. 151, pp. G693-G696,
Oct. 2004.
141.
M. Y. Yang, D. S. Yu, and
Albert Chin,
¡§High-Density
Radio-Frequency Metal-Insulator- Metal capacitors using High-k
ƒnLa2O3 dielectrics,¡¨
J. Electrochem. Soc. 151, pp. F162-165 (2004).
142.
C. H. Huang, D. S. Yu,
A. Chin,
W. J. Chen, and S. P. McAlister, ¡§Device level characterization for
energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height,¡¨
J. Electrochem. Soc. 151, pp. G377-G379 (2004).
143.
B. T. Chen, C. H. Tseng, H. C. Cheng, C. W. Chao, T. K.
Chang, J. H. Lu and A.
Chin, ¡§Symmetric
Gate-Overlapped LDD Poly-Si TFTs with Selective and Isotropic Deposited
Ni Sub-gate,¡¨ Electrochem.& Solid-State Lett.
7,
pp. G37-G39 (2004).
144.
S. Zhu, H. Y. Yu, J. D. Chen, S. J. Whang, J. H. Chen, C.
Shen, C. Zhu, S. J. Lee, M. F. Li, D. S. H. Chan, W. J. Yoo, A. Du, C.
H. Tung, J. Singh, A.
Chin,
and D. L. Kwong, ¡§Low temperature MOSFET technology with Schottky
barrier source/drain, high-k gate dielectric and metal gate electrode,¡¨
Solid-State Electronics, 48, 2004, pp. 1987-1992.
145.
C. C. Chen, B. F. Hung,
A. Chin,
and S. P. McAlister, ¡§High
Performance CPW and Microstrip Ring Resonators on Silicon Substrates,¡¨
Microwave &
Optical Tech. Lett.,
September 20, 2004.
146.
C. C. Chen, B. F. Hung,
A. Chin,
and S. P. McAlister, ¡§High
Performance Bulk And Thin-Film Microstrip Transmission Lines On
VLSI-Standard Si Substrates,¡¨
Microwave &
Optical Tech. Lett.,
September 20, 2004.
147.
D. S. Yu, C. H. Wu, C. H. Huang,
A. Chin,
W. J. Chen, Chunxiang Zhu, M. F. Li, and Dim-Lee Kwong, ¡§Fully
Silicided NiSi and
Germanided
NiGe Dual Gates on SiO2 n- and p-MOSFETs,¡¨
IEEE Electron
Device Lett.
24, no. 12, pp. 739-741 (2003).
148.
S. J. Ding, H. Hu, H. F. Lim, S. J. Kim, X.
F. Yu, C. Zhu, M. F. Li, B. J. Cho,D. S. H. Chan, S. C. Rustagi, M. B.
Yu, A. Chin,
and D. L. Kwong,
¡§High-Performance
MIM Capacitor Using ALD High-k
HfO2-Al2O3 Laminate Dielectrics,¡¨
IEEE Electron Device Lett. 24, no. 12, pp. 730-732 (2003).
149.
K. T. Chan, C. H. Huang,
A. Chin,
M. F. Li, D. L. Kwong, S. P. McAlister, D. S. Duh, and W. J. Lin,
¡§Large Q-factor Improvement for Spiral Inductors on Silicon using Proton
Implantation,¡¨
IEEE Microwave & Wireless Components
Lett.
13, no. 11, pp. 460-462 (2003).
150.
M.Y. Yang, C.H. Huang,
A. Chin,
C.
Zhu, B.J. Cho, M.F. Li, and Dim-Lee Kwong, ¡§Very
high density RF MIM capacitors (17fF/£gm2) using high-£e Al2O3
doped Ta2O5 dielectrics,¡¨
IEEE Microwave & Wireless Components
Lett.
13, no. 10, pp. 431-433 (2003).
151.
K. T. Chan,
A. Chin,
M. F. Li, D. L. Kwong, S. P. McAlister, D. S. Duh, W. J. Lin, and C. Y.
Chang, ¡§High-Performance
Microwave Coplanar Bandpass and Bandstop Filters on Si Substrates,¡¨
IEEE Trans.
Microwave Theory Tech.,
vol. 51, no. 9, pp. 2036-2040 (2003).
152.
K. T. Chan,
A. Chin, Y. D. Lin, C. Y. Chang,
C. X. Zhu,
M. F. Li, D. L. Kwong, S. McAlister, D. S.
Duh, and W. J. Lin, ¡§Integrated antennas on Si with over 100 GHz
performance, fabricated using an optimized proton implantation process,¡¨
IEEE Microwave & Wireless Components Lett. 13, no. 11, pp.
487 -489 (2003).
153.
S. J. Kim, B. J. Cho, M. F. Li, C. Zhu,
A. Chin,
and D. L. Kwong, ¡§Lanthanide
(Tb)-Doped HfO2 for High-Density MIM Capacitors,¡¨
IEEE Electron
Device Lett.
24, pp. 442-444, July (2003).
154.
S. J. Kim, B. J. Cho, M. F. Li, X. Yu, C.
Zhu, A. Chin,
and D. L. Kwong, ¡§PVD
HfO2 for high-precision mim capacitor applications,¡¨
IEEE Electron
Device Lett.
24, pp. 387-389, June (2003).
155.
M.Y. Yang, C. H. Huang,
A. Chin,
C. Zhu, M. F. Li,
and D. L. Kwong, ¡§High
Density MIM Capacitors Using AlTaOx Dielectrics,¡¨
IEEE Electron Device Lett.
24, pp. 306-308, May (2003).
156.
C. Y. Lin, D. S. Yu,
A. Chin,
C. Zhu, M. F. Li, and D. L. Kwong, ¡§Fully silicided NiSi gate on
La2O3 MOSFETs,¡¨ IEEE
Electron Device Lett. 24, pp. 348-350, May (2003).
157.
H. Hu, C. Zhu, X. Yu,
A. Chin,
M. F. Li, B. J. Cho, and D. L. Kwong, ¡§MIM Capacitors Using
Atomic-Layer-Deposited High-£e (HfO2)1-x(Al2O3)x
dielectrics,¡¨ IEEE Electron Device
Lett. 24, no. 2, pp. 60-62 (2003).
158.
X. Yu, C. Zhu, H. Hu,
A. Chin,
M. F. Li, B. J. Cho, and D. L. Kwong, ¡§A High Density MIM Capacitor (13
fF/£gm2) Using ALD HfO2 Dielectrics,¡¨
IEEE Electron Device Lett. 24, no. 2, pp. 63-65 (2003).
159.
K. T. Chan,
A. Chin,
S. P. McAlister, C. Y. Chang, J. Liu, S. C. Chien, D. S. Duh, and W. J.
Lin, ¡§Low RF noise and power loss for ion implanted Si having an
improved implantation process,¡¨ IEEE
Electron Device Lett. 24, pp. 28-30, Jan. (2003).
160.
C. L. Sun, J. J. Hsu, S. Y. Chen, and
A. Chin,
¡§Effect of Zr/Ti
Ratios on Characterization of Pb(ZrxTi1-x)O3
Thin Films on Al2O3 Buffered Si for One-Transistor
Memory Applications,¡¨
J. Electrochem. Soc.
150, pp. G187-G191 (2003).
161.
K. T. Chan, C. Y. Chen,
A. Chin,
J. C. Hsieh, J. Liu, T. S. Duh, and W. J. Lin, ¡§40-GHz Coplanar
Waveguide Bandpass Filters on Silicon Substrate,¡¨
IEEE Microwave & Wireless Components Lett. 12, no. 11, pp.
429-431 (2002).
162.
C. H. Huang, C. H. Lai, J. C. Hsieh and J. Liu and
A. Chin,
¡§RF noise in 0.18-mm
and 0.13-mm
MOSFETs,¡¨ IEEE Microwave & Wireless
Components Lett. 12, no. 12, pp. 464-466 (2002).
163.
C. H. Huang, S. B. Chen, and
A. Chin,
¡§La2O3/Si0.3Ge0.7 p-MOSFETs
with high hole mobility and good device characteristics,¡¨
IEEE Electron Device Lett. 23, pp. 710-712 (2002).
164.
C. Y. Lin, W. J. Chen,
C. H. Lai, A. Chin,
and J. Liu, ¡§Formation of Ni Germano-Silicide on Single Crystalline Si0.3Ge0.7/Si,¡¨
IEEE Electron Device Lett. 23, 464 (2002).
165.
C. H. Tseng, T. K. Chang, F. T. Chu, J. M. Shieh, B. T.
Dai, H. C. Cheng, and
A. Chin,
¡§Investigation of Inductively Coupled Plasma Gate Oxide on Low
Temperature Polycrystalline-Silicon Thin Film Transistors,¡¨
IEEE Electron Device Lett. 23, 333 (2002).
166.
S. B. Chen, J. H. Lai, K. T. Chan,
A. Chin,
J. C. Hsieh, and J. Liu,
¡§Frequency-dependent capacitance reduction in
high-k AlTiOx and Al2O3 gate
dielectrics from IF to RF frequency range,¡¨
IEEE Electron Device Lett. 23, no.
4, pp. 203-205, 2002.
167.
S. B. Chen, J. H. Lai,
A. Chin, J. C. Hsieh, and J. Liu,
¡§High density MIM capacitors using Al2O3 and AlTiOx
dielectrics,¡¨
IEEE Electron Device Lett. no. 4,
pp. 185-188, 2002.
168.
C. L. Sun, S. Y. Chen, S. B. Chen and
A. Chin,
¡§Bi3.25La0.75Ti3O12
Thin Films on Ultra-thin Al2O3 Buffered Si for
Ferroelectric Memory Application,¡¨
Appl. Phys. Lett. 80, 3168 (2002).
169.
C. L. Sun and S. Y. Chen, S. B.
Chen,
A. Chin,
¡§Effect of
annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12
thin films on Al2O3-buffered Si,¡¨
Appl. Phys. Lett. 80, 1984 (2002).
170.
S. B. Chen, C. H. Huang,
A. Chin, J. Lin, J. P. Jou, K. C. Su, and J. Liu, ¡§RF
noise characteristics of high-k AlTiOx and Al2O3
gate dielectrics,¡¨ J. Electrochem. Soc. 149, F69 (2002).
171.
C. Y. Lin, K. H. Shih,
C. C. Wu, and
A. Chin,
¡§Poly-Si Thin-Film Transistors Crystallized by Electron-beam Annealing,¡¨
J. Electrochem. Soc. 149, G391 (2002).
172.
C. H. Huang,
A. Chin,
and W. J. Chen, ¡§Characterization of Si/SiGe Heterostructures on Si
Formed by Solid Phase Reaction,¡¨ J. Electrochem. Soc. 149, G209
(2002).
173.
C. H. Tseng, C. W. Lin, T. H. Teng, T. K.
Chang, H. C. Cheng, and
A. Chin, ¡§Study on
dopant activation of phosphorous implanted polycrystalline silicon thin
films by KrF excimer laser annealing,¡¨
Solid-State Electronics,
vol. 46, no. 8, pp. 1085-1090 (2002).
174.
A. Chin,
M.
Y. Yang, C. L. Sun, and S. Y. Chen,
¡§Stack gate PZT/Al2O3 one transistor ferroelectric
memory,¡¨ IEEE Electron Device Lett.
22, 336 (2001).
175.
Y. H. Lin, F. M. Pan, Y. C. Liao, Y. C. Chen, I. J.
Hsieh, and A. Chin,
¡§The Cu contamination effect in oxynitride gate dielectrics,¡¨ J.
Electrochem. Soc. 148, G627 (2001).
176.
C. L. Sun, S. Y. Chen, M. Y. Yang, and
A. Chin,
¡§Characteristics of Pb(Zr0.53Ti0.47)O3
on Metal and Al2O3/Si Substrates,¡¨ J.
Electrochem. Soc. 148, F203 (2001).
177.
C. H. Tseng, C. W. Lin, T. K. Chang, H. C. Cheng, and
A. Chin,
¡§Effects of Excimer Laser Dopant Activation on the Low
Temperature Polysilicon Thin-Film Transistors with Lightly Doped
Drains,¡¨ Electrochem. Solid-State Lett. 4, G94 (2001).
178.
Y. H. Lin, Y. C. Chen, K. T. Chan, F. M. Pan, I. J.
Hsieh, and A. Chin,
¡§The strong degradation on 30
Å
oxide integrity contaminated by copper,¡¨ J. Electrochem. Soc.
148, F73 (2001).
179.
Y. H. Wu,
A. Chin,
K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai, C. C. Chi, ¡§Fabrication of
very high resistivity Si with low loss and cross talk,¡¨
IEEE Electron Device Lett. 21, no.
9, 442 (2000).
180.
Y. H. Lin, Y. H. Wu,
A. Chin,
and F. M. Pan ¡§The effect of copper on gate oxide integrity,¡¨ J.
Electrochem. Soc. 147, 4305 (2000).
181.
Y. H. Wu,
A. Chin,
and W. J. Chen, ¡§Thickness dependent gate oxide quality of thin thermal
oxide grown on high temperature formed SiGe,¡¨
IEEE Electron Device Lett. 21, 289
(2000).
182.
Y. H. Wu and
A. Chin,
¡§High temperature formed SiGe p-MOSFETs with good device
characteristics,¡¨ IEEE Electron
Device Lett. 21, 350 (2000).
183.
Y. H. Wu, M. Y. Yang,
A. Chin,
and W. J. Chen, ¡§Electrical characteristics of high quality La2O3
dielectric with equivalent oxide thickness of 5Å,¡¨
IEEE Electron Device Lett., vol. 21,
pp. 341-343, July 2000.
184.
Y. H. Wu and
A. Chin,
¡§Gate oxide integrity of thermal oxide grown on high temperature formed
Si0.3Ge0.7,¡¨ IEEE
Electron Device Lett. 21, 113 (2000).
185.
Y. H. Wu, C. H. Huang, W. J. Chen, C. N. Lin, and
A. Chin,
¡§The buried oxide property in oxygen plasma enhanced low-temperature
wafer bonding,¡¨ J. Electrochem. Soc. 147, 2754 (2000).
186.
Y. H. Wu, S. B. Chen,
A. Chin,
and W. J. Chen ¡§High Quality Thermal Oxide Grown on High Temperature
Formed SiGe,¡¨ J. Electrochem. Soc. 147, 1962 (2000).
187.
Y. H. Wu, W. J. Chen, S. L. Chang,
A. Chin,
S. Gwo, and C. Tsai, ¡§Improved Electrical Characteristics of CoSi2
Using HF-Vapor Pretreatment,¡¨ IEEE
Electron Device Lett. 20, 200 (1999).
188.
J. M. Lai, W. H. Chieng, B. C. Lin,
A. Chin, and C. Tsai, ¡§The leakage current effect of thin gate
oxide (2.4-2.7 nm) with in-situ native oxide desorption,¡¨ J.
Electrochem. Soc. 146, 2216 (1999).
189.
Y. H. Wu, W. J. Chen,
A. Chin,
and C. Tsai, ¡§The effect of native oxide on epitaxial SiGe from
deposited amorphous Ge on Si,¡¨ Appl. Phys. Lett. 74, 528 (1999).
190.
B. C. Lin, Y. C. Cheng,
A. Chin,
T. Wang, and C. Tsai, ¡§The Deuterium Effect on Stress-Induced Leakage
Current,¡¨ Jpn. J. Appl. Phys. 38, 2337 (1999) (special issue of
SSDM Conference).
191.
C. C. Liao,
A. Chin,
and C. Tsai, ¡§Electrical Characterization of Al2O3
on Si from MBE-grown AlAs and Al,¡¨ J. Crystal Growth, 201/202,
pp. 652-655, (1999) (special issue of Intl. MBE Conference).
192.
A. Chin,
B. C. Lin, W. J. Chen, Y. B. Lin, and C. Tsai, ¡§The Effect of Native
oxide on Thin Gate Oxide Integrity,¡¨ IEEE
Electron Device Lett. 19, 426 (1998).
193.
A. Chin,
W. J. Chen, T. Chang, R. H. Kao, B. C. Lin, C. Tsai, and J. C.-M. Huang,
¡§Thin Oxides with in-situ Native Oxide Removal,¡¨
IEEE Electron Device Lett. 18, 417
(1997).
194.
A. Chin,
W. J. Chen, B. C. Lin, J. H. Kao, C. Tsai, and J. C.-M. Hwang,
"Ultra-thin (11 Å - 38 Å) N2O-oxide with atomically flat
interfaces," J. Electrochem. Soc. 144, L97 (1997).
195.
A. Chin,
C. C. Liao, and C. Tsai, "In0.52Al0.48As/InAs/InxAl1-xAs
Pseudomorphic HEMT¡¦s on InP," IEEE
Electron Device Lett. vol. 18, no. 4, pp. 157-159 (1997).
196.
A. Chin,
C. C. Liao, J. Chu, and S. S. Li, ¡§Investigation of Si-doped p-type
AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and
multi-quantum wells grown on (311)A GaAs,¡¨ J. Crystal Growth 176,
999 (1997).
197.
A. Chin,
B. C. Lin, and W. J. Chen, "High quality epitaxial Si grown by a simple
low-pressure chemical vapor deposition at 550 degrees C," Appl. Phys.
Lett. 69, 1617 (1996).
198.
A. Chin,
K. Lee, B. C. Lin, and S. Horng, "Picosecond photoresponse of carriers
in Si ion-implanted Si," Appl. Phys. Lett. 69, no. 5, 653 (1996).
199.
A. Chin,
W. J. Chen, F. Ganikhanov, G.-R. Lin, J.-M. Shieh, C.-L. Pan, and K. C.
Hsieh, "Microstructure and subps photoresponse in GaAs grown by
molecular beam epitaxy at very low temperatures," Appl. Phys. Lett.
69, 397 (1996).
200.
A. Chin
and W. J. Chen, "Observation of compositional modulation in (111)A
InGaAs quantum wells and the effect on optical properties," Appl.
Phys. Lett. 69, 443 (1996).
201.
A. Chin
and K. Lee, "High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on
(111)A GaAs substrates," Appl. Phys. Lett. 68, 3437 (1996).
202.
A. Chin,
B. C. Lin, G. L. Gu, and K. Y. Hsieh, "Optical and structure properties
of spontaneously formed long-range compositional modulation in (111)A
and (111)B AlGaAs," J. Appl. Phys. 79, 8669
(1996).
203.
A. Chin
and B. C. Lin, ¡§High optical quality of strained (111)B In0.12Ga0.88As/GaAs
and In0.12Ga0.88As/Al0.2Ga0.8As
multiple quantum wells,¡¨ Appl. Phys. Lett. 68, 2717 (1996).
204.
J. F. Chen, N. C. Chen, S. Y. Chiu, P. Wang, W. I. Lee,
and A. Chin,
¡§Temperature-dependent transport properties of n+ GaAs/low temperature
GaAs/n+ GaAs structures grown by molecular beam epitaxy,¡¨ J.
Appl. Phys. 79, 8488 (1996).
205.
A. Chin,
H. Y. Lin, and B. C. Lin, "Enhancement of the optical and electrical
properties in InGaAlP/InGaP PIN heterostructures by rapid thermal
annealing on misoriented substrate," Solid-State Electronics 39,
1005 (1996).
206.
A. Chin,
B. C. Lin, G. L. Gu, and K. Y. Hsieh, "Spontaneously formed long-range
Al-rich and Ga-rich AlxGa1-xAs/AlyGa1-yAs
superlattice and optical properties enhancement in (111)A AlGaAs,"
Appl. Phys. Lett. 67, 3617 (1995).
207.
A. Chin,
H. Y. Lin and K. Y. Hsieh, "Strong enhancement of the optical and
electrical properties, and spontaneous formation of an ordered
superlattice in (111)B AlGaAs," J. Crystal Growth 150, 436
(1995).
208.
A. Chin,
K. Y. Hsieh, and H. Y. Lin, "Spontaneous formation of Al rich and Ga
rich AlxGa1-xAs/AlyGa1-yAs
superlattice and strong enhancement of optical properties," Appl.
Phys. Lett. 65, 1921 (1994).
209.
T. M. Cheng,
A. Chin,
C. Y. Chang, M. F. Huang, K. Y. Hsieh, and J. H. Huang, "Strong
accumulation of As precipitates in low temperature InGaAs quantum wells
grown by molecular beam epitaxy," Appl. Phys. Lett. 64, 1546
(1994).
210.
T. M. Cheng, C. Y. Chang,
A. Chin,
M. F. Huang, and J. H. Huang, "Two-dimensional arsenic precipitation by
In delta doping during low temperature molecular beam epitaxy growth of
GaAs or AlGaAs," Appl. Phys. Lett. 64, 2517 (1994).
211.
A. Chin,
T. M. Cheng, S. P. Peng, Z. Osman, U. Das, and C. Y. Chang, "Strong
luminescence intensities in Al0.22Ga0.78As
grown on misoriented (111)B GaAs," Appl. Phys. Lett. 63, 2381
(1993).
212.
A. Chin,
L. Yang, P. Martin, K. Nordheden, J. Ballingall, T. Yu, and P. C. Chao,
"High performance heterojunction bipolar transistors grown by
molecular-beam epitaxy using novel growth method," J. Vac. Sci.
Technol. B11, 972 (1993).
213.
A. Chin,
P. Martin, U. Das, J. Mazurowski, and J. Ballingall, "Chemical beam
epitaxial growth of InP, InGaP, and InAs heterojunctions using
triethylindium and bisphosphinoethane," J. Vac. Sci. Technol.
B11, 847 (1993).
214.
H. H. Wang, J. F. Whitaker,
A. Chin,
J. Mazurowski, and J. M. Ballingall, "Subpicosecond carrier response of
unannealed low-temperature grown GaAs vs temperature," J. Electron
Materials 22, 1461 (1993).
215.
J. H. Zhao, T. Burke, M. Weiner,
A. Chin,
and J. M. Ballingall, "Reverse-biased performance of a
molecular-beam-epitaxial-grown AlGaAs/GaAs high-power optothyristor for
pulsed power-switching applications," J. Appl. Phys. 74, 5225
(1993).
216.
J. H. Zhao, T. Burke, D. Larson, M. Weiner,
A. Chin,
J. M. Ballingall, and T. Yu, "Sensitive optical gating of reverse-biased
AlGaAs/GaAs optothyristors for pulsed power switching applications,"
IEEE Trans. Electron Devices 40, 817
(1993).
217.
A. Chin,
P. Martin, U. Das, J. Mazurowski, and J. Ballingall, "Use of
triethylindium and bisphosphinoethane for the growth of InP by chemical
beam epitaxy," Appl. Phys. Lett. 61, 2099 (1992).
218.
A. Chin,
P. Martin, U. Das, J. Ballingall, and T. Yu, "High-quality materials and
heterostructures on (111)B GaAs," J. Vac. Sci. Technol. B10, 775
(1992).
219.
J. H. Zhao, T. Burke, D. Larson, M. Weiner,
A. Chin,
J. M. Ballingall, and T. Yu, "Dynamic I-V characteristics of an
AlGaAs/GaAs-based optothyristor for pulsed power-switching
applications," IEEE Electron Device
Lett. EDL-13, 161 (1992).
220.
J. H. Zhao, T. Burke, D. Larson, M. Weiner,
A. Chin,
J. M. Ballingall, and T.-H. Yu, "Using reverse dynamic I-V
characteristics of AlGaAs/GaAs optothyristor for pulsed power-switching
applications," Electron. Lett. 28, 977 (1992).
221.
S. D. Hersee, L. Yang, M. Kao, P. Martin, J. Mazurowski,
A. Chin,
and J. Ballingall, "MOMBE GaAs and AlGaAs for microelectronic devices,"
J. Crystal Growth 120, 218 (1992).
222.
C. Kurdak, A. M. Chang,
A. Chin,
and T. Y. Chang, "Quantum interference effects and spin-orbit
interaction in quasi-one-dimensional wires and rings," Phys. Rev. B
46, 6846 (1992).
223.
W. Zhou, D. D. Smith, H. Shen, J. Pamulapati, M. Dutta,
A. Chin,
and J. Ballingall, "Comparison of (111)- and (001)-grown GaAs-AlxGa1-xAs
quantum wells by magnetoreflectance," Phys. Rev. B 45, 12156
(1992).
224.
A. Chin,
P. Martin, J. Ballingall, T.-H. Yu, and J. Mazurowski, "Comparison of
high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy,"
Appl. Phys. Lett. 59, 2394 (1991).
225.
A. Chin,
P. Martin, P. Ho, J. Ballingall, T. Yu, and J. Mazurowski, "High quality
(111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a
GaAs/InGaAs/GaAs quantum well," Appl. Phys. Lett. 59, 1899
(1991).
226.
A. Chin,
and T. Y. Chang, "Enhancement of quantum efficiency in thin photodiodes
through absorptive resonance," IEEE
J. Lightwave Technol. vol 9, no. 3, pp. 321 - 328 (1991).
227.
A. Chin,
T. Y. Chang, A. Ourmazd, and E. M. Monberg, "Partial ordering and
enhanced mobility in Ga0.47In0.53As
grown on vicinal (110) InP," Appl. Phys. Lett. 58, 968 (1991).
228.
A. Chin,
T. Y. Chang, A. Ourmazd, E. M. Monberg, A. M. Chang, and C. Kurdak,
"Effects of substrate orientation, pseudomorphic growth and superlattice
on alloy scattering in modulation doped GaInAs," J. Crystal Growth
111, 466 (1991).
229.
S. D. Hersee, P. M. Martin,
A. Chin,
and J. M. Ballingall, "The growth of high-quality AlGaAs by metalorganic
molecular-beam epitaxy," J. Appl. Phys. 70, 973 (1991).
230.
A. Chin,
and T. Y. Chang, "Achievement of Exceptionally High Mobilities in
Modulation Doped Ga1-xInxAs
on InP Using a strain Composited Structure," J. Vac. Sci. Technol.
B8, 364 (1990).
231.
A. Chin,
and T. Y. Chang, "Multilayer Reflectors by MBE for Resonance Enhanced
Absorption in Thin High Speed Detectors," J. Vac. Sci. Technol.
B8, 339 (1990).
232.
D. Biswas,
A. Chin,
J. Pamulapati, and P. K. Bhattacharya, "Traps in Molecular-Beam
Epitaxial In1-x-yGaxAlyAs/InP,"
J. Appl. Phys. 67, 2450 (1990).
233.
A. Chin,
P. K. Bhattacharya, K. H. Chang, and D. Biswas, "Optical and Structural
Properties of Molecular Beam Epitaxial GaAs on Sapphire," J. Vac.
Sci. Technol. B7, 283 (1989).
234.
A. Chin,
and P. K. Bhattacharya, "Theory and Operation of a GaAs/AlGaAs/InGaAs
Superlattice Phototransistor with Controlled Avalanche Gain,"
IEEE Trans. Electron Devices 36,
2183 (1989).
235.
A. Chin,
P. K. Bhattacharya, W. P. Hong, and W. Li," Molecular Beam Epitaxial
Growth of High Quality In0.52Al0.48As
and In1-x-yGaxAlyAs,"
J.
Vac. Sci. Technol.
B6, 665 (1988).
236.
W. Li, A.
Chin,
and P. K. Bhattacharya, " Molecular Beam Epitaxial GaAs Optical
Detectors on Silica Fibers," Appl. Phys. Lett. 52, 1768 (1988).
237.
M. Marso,
A. Chin,
P. K. Bhattacharya and H. Beneking, "GaInAs Camel Diodes Grown by MBE,"
J. De Physique 49, C4-717 (1988).
238.
R. Borroff, R. Merlin,
A. Chin,
and P. K. Bhattacharya, "Raman Scattering by Optical Phonons in In1-x-yGaxAlyAs
Lattice-Matched to InP," Appl. Phys. Lett. 53, 1652 (1988).
239.
A. Chin,
P. K. Bhattacharya, and G. P. Kothiyal, "Growth of GaAs on SiOx by
Molecular Beam Epitaxy," J. Appl. Phys. 62, 1419 (1987).
240.
P. K. Bhattacharya,
A. Chin,
and K. Seo, "A Controlled-Avalanche Superlattice Transistor,"
IEEE Electron Device Lett. EDL-8, 19
(1987).
241.
W. P. Hong,
A. Chin,
N. Debbar, J Hinckley, P. K. Bhattacharya and J. Singh, "Material
properties and clustering in Molecular Beam Epitaxial In0.52Al0.48As
and In1-x-yGaxAlyAs,"
J.
Vac. Sci. Technol.
B5, 800 (1987).
242.
W. P. Hong, S. Dhar, P. K. Bhattacharya, and
A. Chin, "Deep Levels and a Possible D-X-Like Center in
Molecular Beam Epitaxial InxAl1-xAs,"
J. Electron. Materials 16, 271 (1987).
243.
U. Das, Y. Zebda, P. K. Bhattacharya, and
A. Chin,
"Performance Characteristics of InGaAs/GaAs and GaAs/InGaAlAs Coherently
Strained Superlattice Photodiodes," Appl. Phys. Lett. 51, 1164
(1987).
244.
Y. Nashimoto, S. Dhar, W. P. Hong,
A. Chin,
P. R. Berger, and P. K. Bhattacharya, "Investigation of Molecular Beam
Epitaxial In0.53Ga0.47As
Regrown on Liquid Phase Epitaxial In0.53Ga0.47As/InP,"
J. Vac. Sci. Technol. B4, 540 (1986).
BOOK CHAPTER:
1.
Albert
Chin
and S. P. McAlister, ¡§Nanoscaled High-k Dielectrics for
CMOS and Memory Devices,¡¨ Handbook of NANOCERAMICS and Their Based
NANODEVICES, American Scientific Publishers (ASP), 2009.
2.
Albert
Chin,
¡§High Performance Organic Thin-Film Transistors and Nonvolatile Memory
Devices Using High-k
Dielectric Layers,¡¨ Polymer Thin Films, pp. 197-216, INTECH Publisher,
April 2010, ISBN 978-953-307-059-9.
http://sciyo.com/books/show/title/polymer-thin-films#
3.
Albert
Chin,
¡§Metal Gate/High-£e CMOS Evolution from Si to Ge Platform,¡¨ High-£e Gate
Dielectrics for CMOS Technology, Wiley-VCH publishers, pp. 381~405, Aug.
2012, ISBN 978-3-527-33032-4.
CONFERENCES & PROCEEDINGS: (227+; 128
in IEEE)
Invited paper talk/Panelist:
International Electron Devices Meeting (IEDM)
2003, Device Research Conference (DRC)
2004, European Materials Research Society (E-MRS)
2006, European
Solid State Device Research Conf, (ESSDERC)
2005,
Intl. Solid-State
Devices & Materials Conf. (SSDM)
2008 etc.
1.
C. H. Cheng and Albert Chin, ¡§A New
Ferroelectric RRAM with Fast Switching Speed and Extremely Long
Endurance Compatible to DRAM,¡¨
13th Intl Conf. on Modern Materials &
Technologies,
Tuscany, Italy, June 8-19, 2014.
(Intl Advisory Board Member)
2.
Albert
Chin, ¡§High
Performance RF Front-End Devices/Circuits on VLSI-Standard Si
Substrate,¡¨ 35th Progress
In Electromagnetics Research Symp.
(PIERS), Guangzhou, China,
Aug. 25-28, 2014.
(Invited paper)
3.
Albert Chin
and S. H. Yi, ¡§High
Performance n+/p Junction Technology for High Mobility Ge
nMOSFET,¡¨ 14th Intl Workshop on Junction Technology (IWJT)
(IEEE),
Shanghai, China, May 18-20, 2014.
(Invited paper)
4.
Albert Chin,
¡§Opportunity and Challenges for Organic Electronics beyond Silicon
Integrated Circuit,¡¨ Intl Union of
Materials Research Societies ¡V Intl Conf. on Electronic Materials
(IUMRS-ICEM), Taipei
World Trade Center, Taiwan, June 10-14, 2014.
(Invited paper)
5.
Y.-B. Wang ,
J. Q. Liu, J. L.-W. Li, and Albert Chin, ¡§High-Gain DR Circular
Patch On-Chip Antenna Based on Standard CMOS Technology for
Millimeter-Wave Applications,¡¨ IEEE International Workshop on
Electromagnetics,¡¨ Sapporo, Hokkaido, Japan August 4-6, 2014.
6.
L. Y. Xie, J.
Q. Liu, Y. B. Wang, C. Chuang, Albert Chin, Joshua L. W. Li,
¡§Investigation of a Miniature and High Gain On-chip V Band Microstrip
Antenna,¡¨ 35th
Progress In Electromagnetics Research Symp.
(PIERS),
Guangzhou, China, Aug. 25-28, 2014.
7.
Albert Chin,
and R. M. Wallace,
¡§High-£e/AlGaN/GaN MOSFET on Si Substrate toward Manufacturing,¡¨ 11th
Taiwan-U.S. Air Force Nanoscience Workshop, Hualien, Taiwan, May
13-15, 2014.
8.
Albert Chin,
C. H. Cheng, Z. W. Zheng and Ming Liu, ¡§A Low Switching Energy RRAM with
Excellent Endurance and Improved Distribution,¡¨
Materials Research Society
(MRS), San Francisco, USA,
April 1-5, 2013.
(Invited paper & session chair)
9.
Albert Chin
and H. L. Kao, ¡§High performance RF passive devices on IC-Standard Si
wafer near ideal EM design,¡¨ Asia-Pacific Microwave Conf. (APMC),
IEEE, Seoul, Korea, Nov. 5~8,
2013.
(Invited paper)
10.
Albert Chin
and H. L. Kao, ¡§Si-based Devices Technologies toward THz,¡¨
Progress In Electromagnetics
Research Symp.
(PIERS), Stockholm, Sweden, Aug. 12-15,
2013.
(Invited paper)
11.
Albert Chin,
¡§High Channel Mobility Ge nMOSFET with Good Source-Drain Ohmic Contact
and Small EOT,¡¨ 8th Intl
Conf. on Si Epitaxy & Heterostructures
(ICSI-8), Fukuoka, Japan, June
2-7, 2013. (Invited
paper)
12.
Albert Chin,
J.-Q. Liu, and Joshua Li, ¡§RF Noise and Power Performance Improvements
in Si MOSFET,¡¨ Asia-Pacific Radio
Science Conference (AP-RASC),
Taipei, Taiwan Sept. 3-7, 2013.
(Invited paper)
13.
Albert Chin,
¡§High-£e
Flash Memory,¡¨
Energy Materials
Nanotechnology,
Beijing, China, Sept. 7-10, 2013.
(Invited paper)
14.
P.-G. Chen, M. H. Lee, C. Y. Tsai, and
Albert Chin, ¡§Quaternary InAlGaN-Barrier GaN MOS-HEMT with
Enhancement-Mode Operation,¡¨
8th Intl Conf. on Si Epitaxy &
Heterostructures (ICSI-8),
Fukuoka, Japan, June 2-7, 2013.
15.
D. A. Islamov, T. V. Perevalov, V. A.
Grisenko, C. H. Cheng, and
A. Chin, ¡§Resistive
Memory Switching and Charge Transport Mechanism in HfO2,¡¨
7th Intl Workshop Functional
Nanomaterials & Devices,
pp. 81-82, Kyiv, Ukraine, April 8-11, 2013.
16.
Z. W. Zheng, C. H. Cheng, K. I. Chou, M.
Liu, and Albert Chin,
¡§Current Uniformity Improvement in
Flexible Resistive Memory,¡¨ IEEE Intl Conf.
of Electron Devices and Solid-State Circuits
(EDSSC), Hong Kong, June 3-5, 2013.
17.
K. I. Chou, C. H. Cheng, and
Albert Chin,
¡§GeO2/PZT
Resistive Random Access Memory Devices With Ni electrode,¡¨
IEEE Intl Conf. of Electron Devices and Solid-State Circuits
(EDSSC), Hong Kong, June 3-5, 2013.
18.
Albert Chin,
¡§High voltage
High-£e/AlGaN/GaN MOSFET,¡¨ 10th Taiwan-U.S. Air Force
Nanoscience Workshop, Tokyo, Japan, Aug. 20-22, 2013.
19.
S. L. Liu, X.
C. Tian, Yue Hao, Y. C. Huang, and Albert Chin, ¡§A Low-power
K-band VCO Using Switchable Active Circuit Design,¡¨
Progress In Electromagnetics
Research Symp.
(PIERS), Taipei, Taiwan, March 25-28, 2013.
(Session Organizer &
chair)
20.
Peter Ye (Perdue), T. P. Ma (Yale), Raj
Jammy (SEMATECH VP), David Harame (IBM CTO), Thomas Schroede (IHP Head),
Albert Chin, and Kevin Chen (HKS&T), ¡§High mobility channel for
10nm node and beyond,¡¨ IEEE Intl.
Conf. on Solid-State & IC Tech. (ICSICT), Oct. 30, 2012.
(Panelist)
21.
Albert Chin,
W. B. Chen, P. C.
Chen, Y. H. Wu, C. C. Chi, Y. J. Lee, K. S. Chang-Liao and C. H. Kuan,
¡§Advanced Metal-Gate/High-£e CMOS with Small EOT and Better High Field
Mobility,¡¨ IEEE Intl. Conf. on
Solid-State & IC Tech. (ICSICT), Oct. 29-Nov. 1, 2012.
(Invited paper)
22.
Albert Chin,
Y. C. Chiu, C. H. Cheng, Z. W. Zheng and M. Liu, ¡§Ultra-Low
Switching Power RRAM Using Hopping Conduction Mechanism,¡¨
Dielectric Materials & Metals for Nanoelectronics & Photonics 10, in
222th ECS Meeting, pp. 1-6, Honolulu, Hawaii, Oct.
7-12, 2012. (1st
Invited paper & session chair)
23.
Albert Chin,
¡§Ge technology beyond Si CMOS,¡¨ in Symp. on
More than Moore: Novel materials approaches for functionalized Silicon
based Microelectronics (European Materials Research Society,
E-MRS) Symp. Dig., pp., Strasbourg, France, May 14~17, 2012.
(Invited paper & session chair)
24.
Albert Chin,
P. C. Chen, C. H.
Cheng, Y. H. Wu, X.Y. Liu, and J. F. Kang, ¡§High-£e Gate Dielectrics for
Ge CMOS and Related Memory Devices,¡¨ in International SiGe Technology
and Device Meeting (ISTDM) Symp. Dig.
(IEEE),
pp., Berkeley, CA, USA, June 4~6, 2012.
(Invited paper & session chair)
25.
S. L. Liu, Y. C. Huang, Y. J. Chen, T. Chang and Albert
Chin, ¡§A 2.4 GHz
CMOS Power Amplifier Using Asymmetric MOSFETs,¡¨ Asia-Pacific
Microwave Conf. (APMC), IEEE,
Dec. 4-7, 2012.
26.
J. Chen, T. C. Ku, M. F. Li, Albert Chin,
¡§Investigation of Schottky Junction and MOS Technology for III-V
Compound Semiconductor MOSFET Application,¡¨ 12th Intl
Workshop on Junction Technology (IWJT)
(IEEE),
Shanghai, China, May 14-15, 2012.
27.
Albert Chin,
¡§The Abnormal C-V
Characteristics on High-£e/AlGaN/GaN FET Structure,¡¨ 9th
Taiwan-U.S. Air Force Nanoscience Workshop, Kenting, Taiwan, April
16-20, 2012.
28.
B. Gao, J.F. Kang, Y.S. Chen, F.F. Zhang,
B. Chen, P. Huang, L.F. Liu, X.Y. Liu, Y.Y. Wang, X.A. Tran, Z.R. Wang,
H.Y. Yu, Albert Chin, ¡§Oxide-Based RRAM: Unified Microscopic
Principle for Unipolar and Bipolar Switching,¡¨ in
IEEE
Intl Electron Devices Meeting (IEDM)
Tech. Dig., pp. 420-423, Dec. 2011.
29.
Albert Chin, C. Y. Tsai, and Hong Wang,
¡§High Performance Charge-Trapping Flash Memory with Highly-Scaled
Trapping Layer,¡¨ 11th
Non-Volatile Memory Technology Symp.
(NVMTS)
(IEEE),
Shanghai, China, Nov. 7-9, 2011.
(Invited paper)
30.
Albert Chin, ¡§High Performance RRAM with
Ultra-Low Switching Power,¡¨
8th Intl. Symp. on Advanced Gate Stack Technology
(ISAGST)
(IEEE), Bolton Landing, NY, USA, Oct.
19-21, 2011.
(Invited paper)
31.
Albert Chin,
¡§Non-Volatile Memories for Storage Device and New Applications,¡¨
IEEE
Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, June
12-13, 2011. (Panelist)
32.
S. L. Liu, H. M. Chang, T. Chang, H. L.
Kao, C. H. Cheng, and Albert Chin, ¡§The Reliability Study and
Device Modeling for pHEMT Microwave Power Transistors,¡¨ 220th
ECS Meeting, Boston, MA, USA, Oct. 9-14, 2011.
33.
C. Y. Tsai, C. H. Cheng, T. Y. Chang, K. C.
Chou, Albert Chin,
and F. S. Yeh, ¡§Size- Dependent Trapping Effect in Nano-Dot NonVolatile
Memory,¡¨ 220th ECS Meeting, Boston, MA, USA, Oct.
9-14, 2011.
34.
C. W. Chen, C. H. Cheng, H. C. Yu, G. Y.
Huang, N. H. Chen, Albert Chin, F. S. Huang, ¡§Immersion-plated
Gold Nanocrystal Embedded in LaxO1-x for
Nonvolatile Memory,¡¨
Materials Research Society
(MRS), San Francisco, USA, April 25-29, 2011.
35.
Albert Chin
and T. Kanayama, ¡§High Performance Green Electronic Devices on
Glass/Plastics,¡¨ Taiwan-Japan Workshop on Nano Devices, Tokyo
Institute of Technology, Japan, March 4, 2011.
36.
Albert Chin,
¡§Hetero-Interface Improvement of High-£e/Semiconductor MOSFET using Laser
Annealing,¡¨ 8th Taiwan-U.S. Air Force Nanoscience Workshop,
Seattle, Washington, USA, April 5-6, 2011.
37.
W. B. Chen, B. S. Shie, C. H. Cheng, K. C.
Hsu, C. C. Chi, and Albert Chin, ¡§Higher £e Metal-Gate/High-£e/Ge
n-MOSFETs with <1 nm EOT Using Laser Annealing,¡¨ in
IEEE
Intl Electron Devices Meeting (IEDM)
Tech. Dig., pp. 420-423, San Francisco, Dec. 2010.
38.
C. Y. Tsai, T. H. Lee, Hong Wang, and
Albert Chin, ¡§Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device
with Good Retention and Endurance,¡¨ in IEEE
Intl Electron Devices Meeting (IEDM)
Tech. Dig., pp. 110-113, San Francisco, Dec. 2010.
39.
C. H. Cheng, Albert Chin, and F. S.
Yeh, ¡§High Performance Ultra-Low Energy RRAM with Good Retention and
Endurance,¡¨ in IEEE
Intl Electron Devices Meeting (IEDM)
Tech. Dig., pp. 448-451, San Francisco, Dec. 2010.
40.
C. H. Cheng, Albert Chin, and F. S. Yeh,
¡§Very High Performance Non-Volatile Memory on Flexible Plastic
Substrate,¡¨ in IEEE
Intl Electron Devices Meeting (IEDM)
Tech. Dig., pp. 512-515, San Francisco, Dec. 2010.
41.
C. H. Cheng, Albert Chin, and F. S.
Yeh, ¡§Novel Ultra-Low Power RRAM with Good Endurance and Retention,¡¨
IEEE
Symp. on VLSI Technology,
pp. 85-86, US, June 2010.
42.
Albert Chin,
¡§Charge-trapping
memories: materials and devices,¡¨ Materials Research Society (MRS),
San Francisco, USA, April, 4-8, 2010.
(Tutorial & Section
Chair)
43.
Albert Chin,
¡§Challenges and
potential solution for low cost 3D non-volatile memory,¡¨ 3D Transistor
and its Applications Workshop, Tokyo, Japan, Nov. 5th, 2010.
(Invited paper)
44.
Albert Chin,
¡§Novel Ultra-Low
Energy High-Speed Non-Volatile Memory with Good Retention and
Endurance,¡¨ CMOS Emerging Technologies, Whistler, BC, Canada, May 19th-21st,
2010. (Invitation only)
45.
Albert Chin,
W. B. Chen, B. S.
Shie, K. C. Hsu, P. C. Chen, C. H. Cheng, C. C. Chi, Y. H. Wu, K. S.
Chaing-Liao, S. J. Wang , C. H. Kuan, and F. S. Yeh,
¡§Metal-Gate/High-£e CMOS Scaling from Si to Ge at Small EOT,¡¨
10th Intl. Conf. on Solid-State &
Integrated-Circuit Technology (ICSICT),
(IEEE),
Nov, 2010. (Invited
paper)
46.
Albert Chin,
M. F. Chang, P. T.
Lee and C. H. Wu, ¡§High Performance Organic TFT and Nonvolatile Memory
Using High-k
Dielectric Layers,¡¨ Progress In
Electromagnetics Research Symposium
(PIERS),
Xi'an, CHINA, March 22-26, 2010.
47.
Albert Chin,
Invention of Nearly
Ideal Non-Volatile Memory Using High-£e and Nano Technologies, 7th
Taiwan-U.S. Air Force Nanoscience Workshop, Yilan,Taiwan, April 1,
2010.
48.
Albert Chin,
S. L. Liu, T. Chang,
and C. C. Liao, ¡§High Performance Si-Based RF Devices,¡¨ 12th
Intl. Symp. Microwave and Optical Tech. (ISMOT), New
Delhi, India, Dec. 16-19, 2009.
(Invited paper &
Session Chair)
49.
Albert Chin,
S. H. Lin, K. C. Chiang, and F. S. Yeh, ¡§Improved Device Characteristics
in Charge-Trapping-Engineered Flash Memory Using High-k
Dielectrics,¡¨ 7th International Symposium on High Dielectric
Constant Materials and Gate Stacks, 216th Electro Chemical
Society (ECS) Meeting, Vienna, Austria, Oct. 4-9, 2009.
(Invited paper & Session Chair)
50.
Albert
Chin,
S. H. Lin, F. S. Yeh, C. C. Liao, and M.-F. Li, ¡§Improved Retention and
Cycling Characteristics of MONOS Memory Using
Charge-Trapping-Engineering,¡¨ 16th
IEEE Intl. Symp. on the Physical &
Failure Analysis of ICs (IPFA), pp. 641-645, China, July
6-10, 2009.
(Invited paper)
51.
Albert Chin,
M. F. Chang, S.
H. Lin, W. B. Chen, P. T. Lee, F. S. Yeh, C. C. Liao, M.-F. L, N. C. Su
and S. J. Wang ¡§Flat
Band Voltage Control on Low Vt Metal-Gate/High-k
CMOSFETs with small EOT,¡¨ 16th Bi-Annual Conference on
Insulating Films on Semiconductors (INFOS), pp. 1728¡V1732, Cambridge
University, UK, June 29~July 1, 2009.
(Invited paper)
52.
T. Chang,
H. L. Kao, Y. J. Chen, S. L.
Liu, S. P. McAlister, and Albert Chin, ¡§A
CMOS-Compatible, High RF Power,
Asymmetric-LDD MOSFET
with Excellent Linearity,¡¨
in IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 457-460, San Francisco, Dec. 2008.
53.
S. H. Lin, Albert Chin, F. S. Yeh,
and S. P. McAlister, ¡§Good 150oC Retention and Fast Erase
Characteristics in Charge-Trap-Engineered Memory having a Scaled Si3N4
Layer,¡¨ in
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 843-846, San Francisco, Dec. 2008.
54.
C. C. Liao,
Albert Chin, N. C. Su, M.-F. Li, and S. J. Wang, ¡§Low Vt
Gate-First Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS
Using Simple Process,¡¨
IEEE
Symp. on VLSI Technology,
pp. 190-191, US, June 2008.
55.
Albert Chin,
C. H. Cheng, N. C. Su, S. J. Wang, C. C. Liao, C. P. Chou, and H. L.
Hwang, ¡§Low Vt metal-gate/high-k CMOS From
Understanding the Mechanism to Innovative Solution,¡¨ Intl. Conference
on Solid-State Devices & Materials (SSDM),
(IEEE),
pp. , Japan, Sept., 2008.
(Invited paper)
56.
Albert Chin,
M. F. Chang, C. C. Liao, N. C. Su, P. T. Lee, and S. J. Wang, ¡§Low Vt
Metal-Gate/High-k
CMOS Using Laser-Irradiation Annealing and Reflection,¡¨
International Symp. on
Advanced Gate Stack Technology (ISAGST),
(IEEE),
Austin, Texas USA, Sept.29-Oct. 1, 2008.
(Invited paper)
57.
Albert Chin,
H. J. Yang, S. H. Lin, and F. S. Yeh, ¡§Improved High Temperature
Retention and Endurance in HfON Trapping Memory with Double Quantum
Barriers,¡¨ 8th Intl. Conf. on
Solid-State & Integrated-Circuit Technology (ICSICT),
(IEEE),
October, 2008. (Invited
paper)
58.
M. F. Chang, P. T. Lee and
Albert Chin,
¡§Low Voltage and Small Subthreshold Swing HfLaO/Pentacene Organic TFTs,¡¨
Intl. Conference on Solid-State Devices & Materials (SSDM)
(IEEE),
pp. , Japan, Sept., 2008.
59.
S. H. Lin, H.
J. Yang, H. L. Kao, F. S. Yeh, and Albert Chin, ¡§Improved 150oC
Retention in Hf0.3O0.5N0.2 Memory
Device with Low Voltage and Fast Writing,¡¨ 66th Device
Research Conference (DRC)
(IEEE), pp.,
Santa Barbara, CA, June 2008.
60.
N. C. Su, C. H. Wu, M. F. Chang, J. Z.
Huang, S. J. Wang, W. C. Lee, P. T. Lee,
H. L. Kao and Albert Chin, ¡§Gate-First Low Vt
Al/TaN/Ir/HfLaO p-MOSFET Using Simple Laser Annealing,¡¨ 66th
Device Research Conference (DRC)
(IEEE), pp., Santa
Barbara, CA, June 2008.
61.
C. H. Cheng, H. H. Hsu, Albert Chin,
and C. P. Chou, ¡§Improved Lower Electrode Oxidation of High-k TiCeO
Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment,¡¨ 214th
ECS Meeting, Honolulu, HI, Oct. 12-17, 2008.
62.
C. C. Huang, C. H. Cheng, Albert Chin,
C. P. Chou, ¡§High Performance Ir/TiPrO/TaN Capacitors forAnalog ICs
Application,¡¨ 214th ECS Meeting, Honolulu, HI, Oct. 12-17,
2008.
63.
Albert Chin,
¡§High-k Dielectric Metal-Electrode Innovation to Logic & Memory
Devices,¡¨ CMOS High-k/metal Gate stacks workshop, IEEE EDS Shanghai
Chapter, Fudan Microe, Shanghai, China, 24th Oct 2008.
(Invited paper)
64.
C. F. Cheng,
C. H. Wu, N. C. Su, S. J. Wang, S. P. McAlister and Albert Chin,
¡§Very Low Vt [Ir-Hf]/HfLaO CMOS Using Novel Self-Aligned Low
Temperature Shallow Junctions,¡¨ in
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 333-336, Washington DC, Dec. 2007. (one
of the 14 finalist for best paper competition)
(Section Chairman)
65.
H. L. Kao, D.
Y. Yang, Albert Chin, and S. P. McAlister, ¡§2.4/5 GHz Dual-Band
LC VCO using Variable Inductor and Switched Resonator,¡¨
IEEE MTT-S Intl. Microwave Symp.
Dig., pp. 177-180, June 12-17, 2007.
66.
X.P. Wang, M.-F. Li, H.Y. Yu, J.J. Yang,
C.X. Zhu, W.S. Hwang, W.Y. Loh, A.Y. Du, J.D. Chen, Albert Chin,
S. Biesemans, G.Q. Lo, and D.-L. Kwong, ¡§Highly Manufacturable CMOSFETs
with Single High-k (HfLaO) and Dual Metal Gate Integration Process,¡¨
Intl. Conference on
Solid-State Devices & Materials (SSDM)
(IEEE), pp. 2007.
67.
H. L. Kao,
Albert Chin, K. C. Chang, and S. P. McAlister, ¡§A Low-Power
Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6
GHz,¡¨ Si Monolithic IC in RF Systems, pp. 257-260, Long Beach,
CA, Jan. 2007.
68.
H. L. Kao,
Albert Chin, C. C. Liao, and S. P. McAlister, ¡§Very Low Noise in
90nm Node RF MOSFETs using a New Layout,¡¨ Si Monolithic IC in RF
Systems, pp. 44-48, Long Beach, CA, Jan. 2007.
69.
H. L. Kao, C.
C. Liao, S. P. McAlister, and Albert Chin, ¡§DC-RF Performance
Improvement of Strained 0.13mm
MOSFETs on a Flexible Plastic Substrate,¡¨
Intl. Semiconductor Device Research Symp.
(IEEE), Dec. 2007.
70.
Y. L. Wu , S. T. Lin, C. C. Yang, C. H. Wu,
and Albert Chin,
¡§Study of Low-Temperature and Post-Stress Hysteresis in High-k Gate
Dielectrics,¡¨ Intl. Semiconductor Device
Research Symp. (IEEE),
Dec. 2007.
71.
C. H. Wu, B.
F. Hung, Albert Chin, S. J. Wang, X. P. Wang, M.-F. Li, C. Zhu,
Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang ¡§High Temperature
Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function
Difference,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 617-620, San Francisco, CA, Dec. 2006.
(Section Chairman)
72.
Albert Chin,
C. Chen, D. S. Yu, H. L. Kao, S. P. McAlister and C. C. Chi, ¡§Comparison
of Germanium-on-Insulator CMOS with InGaAs MOSFETs,¡¨ in European
Materials Research Society (E-MRS) Symp. Dig., pp. 711-715,
May 2006.
(Invited paper & Section Chairman)
73.
C. H. Lai,
Albert Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo and C. C.
Chi, ¡§Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast
Speed and Good Retention,¡¨ IEEE
Symp. on VLSI Technology,
pp. 54-55, US, June 2006.
74.
K. C. Chiang, C. C. Huang, Albert Chin,
W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, ¡§High Performance
Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and
RF Applications,¡¨
IEEE
Symp. on VLSI Technology,
pp. 102-103, US, June 2006.
75.
X. P. Wang, C. Shen, Ming-Fu Li, H. Y. Yu,
Y. Sun, Y. P. Feng, A. Lim, H. W. Sik, Albert Chin, Y. C. Yeo,
Patrick Lo, and D. L. Kwong, ¡§Dual Metal Gates with Band-Edge Work
Functions on Novel HfLaO High-k
Gate Dielectric,¡¨
IEEE
Symp. on VLSI Technology,
pp. 9-10, US, June 2006.
76.
H. L. Kao,
Albert Chin, C. C. Liao, C. C. Huang, K. C. Chiang, S. P. McAlister
and C. C. Chi, ¡§High RF Performance and Low Cost Mechanically
Strained MOSFETs on Plastic Substrates,¡¨
IEEE MTT-S
Intl. Microwave Symp. Dig., pp. 295-298, June
12-17, 2006.
77.
H. L. Kao,
Albert Chin, C. C. Liao, S. P. McAlister, J. Kwo, and M. Hong,
¡§Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs,¡¨
64th Device Research Conference (DRC)
(IEEE), pp.,
2006.
78.
C. C. Liao,
S. Kao, Albert Chin, D. S. Yu, M.-F. Li, C. Zhu, and S. P.
McAlister, ¡§Comparing High Mobility InGaAs FETs with Si and GOI
Devices,¡¨ 64th Device Research Conference (DRC)
(IEEE), pp. 85-86,
2006.
79.
C. C.
Chen, Albert Chin,
M. T. Yang, and Sally Liu ¡§High
Performance Band-Pass Filter Embedded into SoCs Using VLSI Backend
Interconnects and High Resistivity Silicon Substrate,¡¨
IEEE
Intl. Interconnect Tech. Conf.
(IITC) Dig., pp. 295-298, San Francisco, USA, June 5-7,
2006.
80.
A. Chin,
C. H. Lai, K. C. Chiang,
W. J. Chen, Y. H. Wu, and H. L. Hwang, ¡§Very
low voltage and high speed MONOS non-volatile memory¡¨ 7th
Intl. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT),
(IEEE),
October 18-21, 2006.
(Invited paper)
81.
Ming-Fu Li, X. P. Wang, H. Y. Yu, C. X.
Zhu, Albert Chin, A.Y. Du, J. Shao, W. Lu, X. C. Shen, P. Liu, S.
Hung, P. Lo, and D.L. Kwong, ¡§A Novel High-k Gate Dielectric HfLaO for
Next Generation CMOS Technology,¡¨
7th Intl. Conf. on Solid-State
and Integrated-Circuit Technology (ICSICT),
(IEEE),
October 18-21, 2006.
(Invited paper)
82.
X. P. Wang, M-F. Li, H. Y. Yu, C. Ren, W.
Y. Loh, C. X. Zhu, Albert Chin, A. D. Trigg, Y. C. Yeo, S. Biesemans, P.
Lo, and D. L. Kwong, ¡§Work Function Tunability by Incorporating
Lanthanum and Aluminum into Refractory Metal Nitride and a Feasible
Integration Process of Such,¡¨
7th Intl. Conf. on Solid-State and
Integrated-Circuit Technology (ICSICT),
(IEEE),
October 18-21, 2006.
83.
B. F.
Hung, C. C. Chen, H. L. Kao, and Albert Chin, ¡§High
Performance RF Passive Devices on Plastic Substrates for RFIC
Application,¡¨
Intl. Conference on Solid-State Devices & Materials (SSDM)
(IEEE),
pp. , Yokohama, Japan, Sept. 15-17, 2006.
84.
D. S. Yu, Albert Chin, C. H. Wu,
M.-F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung and S. P. McAlister,
¡§Lanthanide and Ir-based Dual Metal-Gate/HfAlON CMOS with Large
Work-Function Difference,¡¨
IEEE International Electron Devices Meeting
(IEDM)
Tech. Dig., pp. 649-652, Washington DC, Dec. 2005.
85.
Albert Chin,
C. C. Laio, K. C. Chiang, D. S. Yu, W. J. Yoo, G. S. Samudra, S. P.
McAlister, and C. C. Chi, ¡§Low Voltage High Speed SiO2/AlGaN/AlLaO3/TaN
Memory with Good Retention,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 165-168, Washington DC, Dec. 2005.
86.
X. Yu, C. Zhu, M. Yu, M. F. Li, Albert
Chin, C. H. Tung, D. Gui, and D. L. Kwong, ¡§Excellent Electrical
Performance CMOS Devices with HfTaON/SiO2 Gate Dielectric and
TaN Metal Gate for Advanced Low Standby Power Application,¡¨
IEEE International Electron Devices Meeting
(IEDM)
Tech. Dig., pp. 31-34, Washington DC, Dec. 2005.
87.
Y. Q. Wang, P. K. Singh, W. J. Yoo, Y. C. Yeo, G.
Samudra, Albert Chin, J. H. Chen, S. J. Wang, and D-L. Kwong,
¡§Long retention and low voltage operation using IrO2/HfAlO/HfSiO/HfAlO
gate stack for memory application,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 169-172, Washington DC, Dec. 2005.
88.
Albert Chin,
¡§Device and Modeling of Ge-on-Insulator CMOSFETs,¡¨
New Channel Materials for Future MOSFET
Technology Workshop, (SEMATECH meeting),
Washington DC, Dec. 4, 2005. (Invited paper
Panelist)
89.
C. H. Lai,
Albert Chin, K. C. Chiang, W. J. Yoo, C. F. Cheng, S. P.
McAlister, C. C. Chi and P. Wu, ¡§Novel SiO2/AlN/HfAlO/IrO2
Memory with Fast Erase, Large
DVth
and Good Retention,¡¨
IEEE
Symp. on VLSI Technology,
pp. 210-211, Japan, June 2005.
90.
H. L. Kao,
Albert Chin, B. F. Hung, J. M. Lai, C. F. Lee, M.-F. Li, G. S.
Samudra, C. Zhu, Z. L. Xia, X.Y. Liu, and J. F. Kang ¡§Strain-Induced
Very Low Noise RF MOSFETs on Flexible Plastic Substrate,¡¨
IEEE
Symp. on VLSI Technology,
pp. 160-161, Japan, June 2005.
91.
K. C. Chiang,
Albert Chin, C.
H. Lai, W. J. Chen, C.
F. Cheng, B. F. Hung, and C. C. Liao, ¡§Very High
k and High Density TiTaO MIM Capacitors for
Analog and RF applications,¡¨
IEEE
Symp. on VLSI Technology,
pp. 62-63, Japan, June 2005.
92.
S. J. Kim, B.
J. Cho, M. B. Yu, M. -F. Li, Y. -Z. Xiong, C. Zhu, Albert Chin,
and D. -L. Kwong, ¡§High Capacitance Density (> 17 fF/µm2) Nb2O5-based
MIM Capacitors for Future RF IC Applications,¡¨
IEEE
Symp. on VLSI Technology, pp.
56-57, Japan, June 2005.
(Best Paper Award in Symp. on VLSI
Tech.)
93.
M. F. Li, C. Zhu, C. Shen, X. F. Yu, X. P.
Wang, T. Yang, Y. P. Feng, A. Y. Du, Y. C. Yeo, G. Samudra, Albert
Chin and D. L. Kwong, ¡§New Insights in Based High-k Gate Dielectrics
in MOSFETs,¡¨ ECS 208th meeting, Los Angeles, CA, Oct. 16-21,
2005.
(Invited paper)
94.
H. L. Kao,
Albert Chin, C. C. Huang, B. F. Hung, K. C.
Chiang, Z. M. Lai, S. P. McAlister and C. C. Chi, ¡§Low Noise
and High Gain RF MOSFETs on Plastic Substrates,¡¨
IEEE MTT-S
Intl. Microwave Symp. Dig., pp. 295-298, June
12-17, 2005.
95.
K. C. Chiang,
C. H. Lai, Albert Chin, H. L. Kao and S. P.
McAlister, and C. C. Chi, ¡§Very High Density RF MIM Capacitor
Compatible with VLSI,¡¨ IEEE MTT-S
Intl. Microwave Symp. Dig., pp. 287-290, June
12-17, 2005.
96.
H. L. Kao,
Albert Chin, J. M. Lai, C. F. Lee,
K. C. Chiang, and S. P. McAlister, ¡§Modeling RF MOSFETs After Electrical
Stress Using Low-Noise Microstrip Line Layout,¡¨ in
IEEE RF-IC
Symp. Dig., pp. 157-160, June 2005.
97.
Albert Chin,
H. L. Kao, Y. Y. Tseng, D. S. Yu,
C. C. Chen, S. P. McAlister, C. C. Chi,
¡§Physics and Modeling of Ge-on-Insulator MOSFETs,¡¨
European Solid State
Device Research Conf, (ESSDERC) Tech. Dig.
(IEEE),
pp. 285-288,
Grenoble ¡V France,
September 12-16,
2005.
(Invited paper)
98.
A. Chin,
¡§Integration of Ge and GeOI with III-V RF & opto-electronic
technologies,¡¨ in Future Prospects of Ge Device Technology Workshop,
IMEC, Leuven Belgium, June 21, 2005.
(Invited paper)
99.
M. F. Li, C. Zhu, C. Shen, X. F.Yu, Y. P.
Feng, Y.C.Yeo, Albert Chin and D. L. Kwong, ¡§Charge Trapping and
Bias Temperature Instability in High-k dielectric CMOS Transistors¡¨
208 Electrochemical Society Meeting, Los Angeles, USA Sept. 2005.
(Invited paper)
100.
M.-F. Li, S. Lee, S. Zhu, R. Li, J. Chen,
Albert Chin and D. L. Kwong, ¡§New Developments in Schottky
Source/Drain High-k/Metal Gate CMOS Transistors,¡¨ ECS 207 meeting,
Quabec, Canada, May 2005.
(Invited paper)
101.
C. C.
Chen, C. C. Liao, H. L. Kao, Albert Chin, Sean P. McAlister and
C. C. Chi, ¡§AC Power Loss and Signal Coupling in VLSI backend
Interconnects,¡¨ Intl.
Conference on Solid-State Devices & Materials (SSDM)
(IEEE),
pp. 570-571, Kobe, Japan, Sept. 15-17, 2005.
102.
C. H. Lai, C. C. Huang,
K. C. Chiang, H. L. Kao,
W. J. Chen, Albert Chin
and C. C. Chi, ¡§Fast High-k
AlN MONOS Memory with Large Memory Window and Good Retention,¡¨
63rd Device Research Conference (DRC)
(IEEE), pp., 2005.
103.
J. G. Mihaychuk, M. W. Denhoff, S. P.
McAlister, W. Ross McKinnon, J. Lapointe, and Albert Chin,
¡§Broad-spectrum light emission from metal-insulator-silicon tunnel
diodes¡¨ Proc. SPIE Int. Soc. Opt. Eng. 5730, 29,
(Optoelectronic Integration on Silicon
II ) San Jose, USA, Jan.
2005.
104.
S. McAlister,
A. Chin,
D. S.Yu, and H. L. Kao, ¡§Performance and Potential of Germanium on
Insulator FETs,¡¨ 12th
Canadian Semiconductor Conference, Ottawa, Ontario, Canada 16-19 Aug
2005.
105.
D. S. Yu, Albert Chin, C. C. Laio,
C. F. Lee, C. F. Cheng, W. J. Chen, C. Zhu, M.-F. Li, S. P. McAlister,
and D. L. Kwong, ¡§3D GOI CMOSFETs with Novel IrO2(Hf) Dual
Gates and High-k
Dielectric on 1P6M-0.18mm-CMOS,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 181-184, San Francisco, Dec. 2004.
106.
Tony Low, M. F. Li, W. J. Fan, N. S. Tyam,
Y.-C. Yeo, C. Zhu, A. Chin, L. Chan, D. L. Kwong, ¡§Impact of
Surface Roughness on Silicon & Germanium Ultra-Thin-Body MOSFETs,¡¨
IEEE International Electron Devices Meeting
(IEDM)
Tech. Dig., pp. 151-154, San Francisco, Dec. 2004.
107.
M. C. King, M.
T. Yang, C. W. Kuo, Y. Chang, and A. Chin, ¡§RF
Noise Scaling Trend of MOSFETs from 0.5
mm
to 0.13 mm
Technology Nodes,¡¨ in
IEEE MTT-S Intl.
Microwave Symp. Dig.,
vol. 1, pp. 9-12, June 6-11, 2004.
108.
D. S. Yu, K.
T. Chan, A. Chin,
S. P. McAlister, C. Zhu,
M. F. Li, and Dim-Lee Kwong, ¡§Narrow-Band Band-pass
Filters on Silicon Substrates at 30 GHz,¡¨ in
IEEE MTT-S
Intl. Microwave Symp. Dig.,
vol. 3, pp. 1467-1470, June 6-11, 2004.
109.
C. H. Lai, C. F. Lee,
A.
Chin, C. H. Wu,
C. Zhu, M. F. Li, S.
P. McAlister, and D. L. Kwong,
¡§A Tunable and Program-Erasable Capacitor on Si with Long Tuning
Memory,¡¨ in IEEE RF-IC
Symp. Dig., pp. 259-262,
June, 2004.
110.
M.C. King,
Z. M. Lai, C. H. Huang, C. F. Lee, D. S. Yu,
C. M. Huang, Y. Chang and Albert Chin, ¡§Modeling Finger Number
Dependence on RF Noise to 10 GHz in 0.13mm
Node MOSFETs with 80nm Gate Length,¡¨ in
IEEE RF-IC
Symp. Dig., pp.
171-174, June, 2004.
111.
Albert Chin,
D. S. Yu, C. C. Laio, C. F. Cheng, W. J. Chen, C. Zhu, M.-F. Li, Y. C.
Yeo, W. J. Yoo, and D. L. Kwong, ¡§New VLSI Architecture- High Mobility
Metal-Gate/High-k
ƒnGOI CMOSFETs and High RF Performance Passive Devices on Si,¡¨ 3rd
International Workshop on New Group IV Semiconductors, Sendai,
Japan, Oct. 12-13, 2004.
(Invited paper)
112.
X. Yu, C. X. Zhu, X. P. Wang, M. F. Li,
Albert Chin, A. Du, W. D. Wang, D. L. Kwong, ¡§High Mobility and
Excellent Threshold Voltage Stability of NMOSFETs Using HfTaO Gate
Dielectrics,¡¨
IEEE
Symp. on VLSI Technology,
pp. 110-111, US, June 2004.
113.
S. J. Kim, B. J. Cho, S. J. Ding, M.-F. Li,
M. B. Yu, C. Zhu, A. Chin, and D.-L. Kwong, ¡§Engineering of
Voltage Nonlinearity in High-k MIM Capacitor for Analog/Mixed-Signal
ICs,¡¨
IEEE
Symp. on VLSI Technology,
pp. 218-219, US, June 2004.
114.
Albert Chin,
C. H. Lai, B. F. Hung, C. F. Cheng, S. P.
McAlister, C. X. Zhu, M.-F. Li and D. L. Kwong, ¡§A Novel
Program-Erasable High-k
AlN Capacitor with Memory Function,¡¨
IEEE
5th Non-Volatile Memory Technology Symp.
(NVMTS) Dig., pp. 18-23, Orlando, FL, USA,
Nov. 15-17, 2004.
(Invited paper)
115.
A. Chin,
D. S. Yu, B. F. Hung, W. J. Chen, C. X. Zhu, M.-F. Li, and D. L. Kwong,
¡§High Electron and Hole Mobility Fully-Silicided-gate/High-k/Ge-On-Insulator
C-MOSFETs with Process Comparable to Current VLSI,¡¨ 2nd
Intl. SiGe Technology & Device Meeting,
IEEE, Frankfurt (Oder), Germany,
May 16-19, 2004.
(Invited paper & Section Chairman)
116.
A. Chin,
C. H. Lai, Z. M. Lai, C. F. Lee, C. Zhu,
M. F. Li, B. J. Cho and
D.-L. Kwong, ¡§High Performance RF MOSFETs and Passive Devices on Si¡¨
Asia-Pacific Microwave Conf. (APMC),
IEEE, Delhi, India, Dec. 15-18, 2004.
(Invited paper)
117.
J. G.
Mihaychuk, M. W. Denhoff, S. P. McAlister, W. R. McKinnon, P. Ma, J.
Lapointe, and Albert Chin, ¡§Light emission in silicon tunnel
diodes,¡¨ Proc. SPIE Int. Soc. Opt. Eng. 5577, 423, Ottawa, CA,
Sept. 2004. (Invited
paper)
118.
C. C. Chen, J.
T. Kuo, C. Y. Tsai and Albert Chin, ¡§A high-performance ring
resonator filter on pcb with a large bandwidth and low insertion loss,¡¨
Asia-Pacific Microwave Conf. (APMC),
IEEE,
Delhi, India, Dec. 15-18, 2004.
119.
P. Kalavade, J. Schulze, S. Banerjee, A.
Chin, and J Kavalieros, ¡§Ge in main-stream CMOS: a future or fancy?¡¨
62th Device Research Conference (DRC)
(IEEE), pp. 189-189,
Notre Dame, Indiana, June 2004.
(Rump section panelist)
120.
N. Wu, Q. Zhang, C. Zhu, D. S. H. Chan, M.
F. Li, N. Balasubramanian, A. Y.Du, A. Chin, J. K. O. Sin, and
D.-L. Kwong, ¡§A Novel Surface Passivation Process for HfO2 Ge MOSFETs¡¨
62th Device Research Conference
(DRC)
(IEEE), pp. 19-20,
Notre Dame, IN, June 2004.
121.
D. S. Yu, A. Chin, B. F. Hung, W. J.
Chen, C. X. Zhu, M.-F. Li, S. Y. Zhu and D. L. Kwong, ¡§Low Workfunction
Fully Silicided Gate on SiO2/Si and LaAlO3/GOI
n-MOSFETs,¡¨ 62th Device
Research Conference (DRC)
(IEEE), pp. 21-22,
Notre Dame, IN, June 2004.
122.
C. H. Lai, D. S. Yu, C. F. Cheng, Albert
Chin, S. P. McAlister, C. X. Zhu,
M.-F. Li and D. L. Kwong, ¡§A Novel Program-Erasable Capacitor Using
High-k
AlN Dielectric,¡¨
62th Device Research Conference (DRC)
(IEEE), pp. 77-78,
Notre Dame, IN, June 2004.
123.
M. F. Li , H. Y. Yu, Y. T. Hou , J. F. Kang
, X. P. Wang, C. Shen, C. Ren, Y. C. Yeo, C. X. Zhu, D.S.H. Chan,
Albert Chin, D.L.Kwong, ¡§Selected Topics on HfO2 Gate
Dielectrics for future ULSI CMOS Devices,¡¨
7th Intl. Conf. on Solid-State &
Integrated-Circuit Technology (ICSICT),
(IEEE),
October 18-21, 2004.
(Invited paper)
124.
A. Chin,
H. L. Kao, D. S. Yu, C. C. Liao, C. Zhu, M.-F. Li, S. Zhu and
Dim-Lee Kwong, ¡§High Performance Metal-Gate/High-k
MOSFETs and GaAs Compatible RF Passive Devices on Ge-On-Insulator
Technology¡¨ 7th Intl. Conf. on Solid-State and
Integrated-Circuit Technology (ICSICT),
(IEEE),
October 18-21, 2004.
(Invited paper)
125.
D. S. Yu, C. F. Cheng, Albert Chin,
C. Zhu, M.-F. Li, and Dim-Lee Kwong, ¡§High Performance fully silicided
NiSi:Hf gate on LaAlO3/GOI n-MOSFET with Little Fermi-level
Pinning,¡¨ Intl. Conference on Solid-State Devices & Materials (SSDM)
(IEEE), Tokyo,
Japan, Sept. 15-17, 2004.
126.
Tony Low, C. Shen, M.-F. Li, Yee-Chia Yeo,
Y.-T. Hou, C.X. Zhu, Albert Chin, Lap Chan, D.-L. Kwong, ¡§Study
of Mobility in Strained Silicon and Germanium Ultra
Thin Body MOSFETs,¡¨ Intl. Conference on Solid-State Devices &
Materials (SSDM)
(IEEE),
Tokyo, Japan, Sept. 15-17, 2004.
127.
S. Zhu, J. Chen, H. Y. Yu, S. J. Whang, J.
H. Chen, C. Shen, M. F. Li, S. J. Lee ,C. Zhu, DSH Chan, A. Du, C. H.
Tung , J. Singh, Albert Chin, and D.L.Kwong, ¡§Schottky s/d
MOSFETs with high-K gate dielectrics and metal gate electrodes,¡¨ 7th
Intl. Conf. on Solid-State and Integrated- Circuit Technology (ICSICT),
(IEEE), October
18-21, 2004.
128.
S. J. Ding, H. Hu, C. Zhu, S. J. Kim, M. F.
Li, B. J. Cho, Albert Chin, and D.L.Kwong, ¡§A. comparison study
of high-density MIM capacitors with ALD HfO2-Al2O3
Laminated, sandwiched and stacked dielectrics,¡¨ 7th Intl.
Conf. on Solid-State & Integrated-Circuit Technology (ICSICT),
(IEEE), October
18-21, 2004.
129.
C. C. Liao, Z. M. Lai, C. F. Lee, J. T. Lin, D. S. Yu and
Albert Chin,
¡§Modeling RF Noise of Multi-Fingers 0.18
mm
node MOSFETs,¡¨ Electrochemical Society (ECS) Intl Semiconductor
Technology Conf., 2004.
130.
Y. Tian, S. C. Rustagi, A. Chin,
M. F. Li, Y. Xiong, C X Zhu, M B Yu,
¡§Enhancement of Q-Factor of Inductors using High energy Proton
Implantation¡¨, Symp. on Microelectronics (SOM), Singapore, 2004.
131.
A. Chin,
K. T. Chan, H. C. Huang, C. Chen, V. Liang, J. K. Chen, S. C. Chien, S.
W. Sun, D. S. Duh, W. J. Lin, C. Zhu, M.-F. Li,
S. P. McAlister
and D. L. Kwong, ¡§RF Passive Devices on Si
with Excellent Performance Close to Ideal Devices Designed by
Electro-Magnetic Simulation,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 375-378, Washington DC, Dec. 2003.
(Invited paper)
132.
C. H. Huang, D. S. Yu,
A. Chin,
W. J. Chen, C. X. Zhu, M.-F. Li, B. J. Cho, and D. L. Kwong, ¡§Fully
Silicided NiSi and Germanided NiGe Dual Gates on SiO2/Si and
Al2O3/Ge-On-Insulator MOSFETs,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 319-322, Washington DC, Dec. 2003.
133.
C. Zhu, H. Hu, X. Yu,
A. Chin,
M. F. Li, and D. L. Kwong, ¡§Dependences of VCC (Voltage Coefficient of
Capacitance) of High-K HfO2 MIM Capacitors: An Unified
Understanding and Prediction,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 379-382, Washington DC, Dec. 2003.
134.
H. Hu, S. J. Ding, H. F. Lim, C. Zhu, M.F.
Li, S.J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, B. J. Cho,
D.S.H. Chan, S. C. Rustagi, M. B. Yu, C. H. Tung, A. Du, D. My, P. D.
Fu, A. Chin,
and D. L. Kwong, ¡§High Performance HfO2-Al2O3
Laminate MIM Capacitors by ALD for RF and Mixed Signal IC
Applications,¡¨
IEEE International Electron Devices Meeting
(IEDM)
Tech. Dig., pp. 879-882, Washington DC, Dec. 2003.
135.
T. Low, Y. T. Hou, M. F. Li, C. Zhu,
A. Chin,
G. Samudra1 and D. -L. Kwong, ¡§Investigation of Performance Limits of
Germanium Double-Gated MOSFETs,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 691-694, Washington DC, Dec. 2003.
136.
A. Chin,
D. S. Yu, C. H. Wu, C. H. Huang, and W. J. Chen, ¡§High Hole Mobility of
Al2O3 MOSFETs on Dislocation Free
SiGe-on-Insulator Wafers,¡¨ 2nd International Symposium on
High-K Gate Dielectrics, (ElectroChemical Soc. Fall Meeting)
Orlando, Florida, 12-17 Oct. 2003.
(Invited paper)
137.
A. Chin,
D. S. Yu, C. H. Wu, C. H. Huang, and W. J. Chen, ¡§Ge-On-Insulator: The
Ideal Substrate for High-k
Gate Dielectric and Metal-Gate MOSFETs Integration with Both High
Electron and Hole Mobility,¡¨
International
Symposium on Advanced Devices and Process Technology,
(organized by "Ultimately Integrated Devices and Systems" Research
Committee by the Japan Society for the Promotion of Science),
Tokyo, Japan,
Nov. 5, 2003.
(Invited paper)
138.
A. Chin,
P. Mei, C. Zhu, M.-F. Li, Sungjoo Lee, W. J. Yoo, B. J. Cho and Dim-Lee
Kwong, ¡§New Substrate Platform for Metal-Gate/High-k Gate Dielectric
MOSFET Integration and RF Technology up to 100 GHz,¡¨
Intl. Symp. on Substrate Engineering/Nano
SOI Technology for Advanced Semiconductor Devices,
Seoul, Korea, Nov. 13-15, 2003.
(Invited paper)
139.
C. H. Huang, M. Y. Yang,
A. Chin,
W. J. Chen, C. X. Zhu, B. J. Cho, M.-F. Li, and D. L. Kwong, ¡§Very Low
Defects and High Performance Ge-On-Insulator p-MOSFETs with Al2O3
Gate Dielectrics,¡¨ IEEE
Symp. on VLSI Technology,
pp. 119-120, Japan, June 2003.
140.
S. J. Kim, B. J. Cho, M.-F. Li, C. Zhu,
A. Chin,
and D. L. Kwong, ¡§HfO2 and
Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC
Applications,¡¨ IEEE
Symp. on VLSI Technology,
pp. 77-78, Japan, June 2003.
141.
T. Low, Y. T. Hou, M.-F. Li, C. X. Zhu, D.
L. Kwong and A. Chin,
¡§Germanium MOS: an evaluation from carrier quantization and tunneling
current¡¨
IEEE
Symp. on VLSI Technology,
pp. 117-118, Japan, June 2003.
142.
K. T. Chan, S. S. Chuang, C. H. Wu, C. D.
Kuo, and A. Chin,
¡§Electrically Stimulated Cell Membrane Breakdown in Human Placenta TL
and Lung Cancer Cell A549 in 3D Trap Arrays on
Si Substrate,¡¨ 61th Device Research Conference (DRC)
(IEEE), pp. 103-104,
Salt Lake City, Utah, June 2003.
143.
D. S. Yu, C. H. Huang,
A. Chin,
and W. J. Chen, ¡§Low Defects and High
Quality Al2O3 Ge-on-Insulator MOSFETs,¡¨ 61th
Device Research Conference (DRC)
(IEEE), pp. 39-40,
Salt Lake City, Utah, June 2003.
144.
K. T. Chan,
A. Chin,
M. F. Li, D. L. Kwong, S. P. McAlister, D. S. Duh, and W. J.
Lin, ¡§RF Passive Devices on Si
Substrates with close to ideal EM performance,¡¨ 61th
Device Research Conference (DRC)
(IEEE), pp.
95-96, Salt Lake City, Utah, June 2003.
145.
C. Y. Lin, L. H. Lai,
A. Chin,
Y. T. Hou, M. F. Li, and S. P. McAlister, ¡§Light emission from Al2O3/Si1-xGex/Si
MOS tunnel diodes,¡¨ 61th Device Research Conference
(DRC) (IEEE),
pp. 51-52, Salt Lake City, Utah, June 2003.
146.
K. T. Chan,
A. Chin,
J. T. Kuo, C. Y. Chang, D. S. Duh, W. J. Lin, C. X. Zhu, M. F. Li, and
D. L. Kwong, ¡§Microwave Coplanar Filters on Si Substrates,¡¨ in
IEEE MTT-S
Intl. Microwave Symp. Dig.,
vol. 3, pp. 1909-1912, June 8-13, 2003.
147.
K. T. Chan,
A. Chin,
S. P. McAlister, C. Y. Chang,
V. Liang,
J. K. Chen, S. C. Chien, D. S. Duh, and W. J. Lin, ¡§Low RF loss and
noise of transmission lines on Si substrates using an improved ion
implantation process,¡¨ in IEEE MTT-S
Intl. Microwave Symp. Dig., vol. 2, pp. 963-966,
June 8-13, 2003.
148.
C. H. Huang,
M.Y. Yang, A.
Chin, C. X.
Zhu, M. F. Li, and D. L. Kwong, ¡§High Density RF MIM Capacitors
Using High-k
AlTaOx Dielectrics,¡¨
IEEE MTT-S
Intl. Microwave Symp. Dig.,
vol. 1, pp. 507-510, June 8-13, 2003.
149.
C. H. Huang,
K. T. Chan, C. Y. Chen, A. Chin, G. W. Huang, C. Tseng, V. Liang,
J. K. Chen, and S. C. Chien, ¡§The minimum noise figure and mechanism as
scaling RF MOSFETs from 0.18 to 0.13
mm
technology nodes,¡¨ in
IEEE RF-IC
Symp., pp. 373-376, June 8-10, 2003.
150.
J. G. Mihaychuk,
M. W. Denhoff, S.P. McAlister, W.R. McKinnon, S. Raymond, X. Wu, J. W.
Fraser, H. T. Tran, P. Ma, J.-M. Baribeau, and A. Chin, ¡§Enhanced
Electroluminescence from Metal-Insulator-Silicon Tunnel Diodes,¡¨ 11th
Canadian Semiconductor Technology Conf., Ottawa, Canada, Aug. 18-22,
2003.
151.
Q. Zhang, N. Wu, C. Zhu, M.F. Li, and DSH
Chan, A. Chin,
D.L. Kwong, L.K. Bera, N. Balasubramanian, A.Y. Du, C.H. Tung, H. Liu
and J. K.O. Sin, ¡§Germanium pNOSFETs with HfON gate dielectric,¡¨
Intl.. Semiconductor Device Research Symp.
(IEEE), Washington
DC, Dec. 10-12, 2003.
152.
N. Wu, Q. Zhang, C. Zhu, M.F. Li, and DSH
Chan, A. Chin,
D.L. Kwong, L.K. Bera, N. Balasubramanian, A.Y. Du, C.H. Tung, H. Liu
and J. K. O. Sin, ¡§Ge pMOSFETs with MOCVD HfO2 gate dielectric,¡¨
Intl.. Semiconductor Device Research Symp.
(IEEE), pp. 252-253, Washington DC, Dec. 10-12, 2003.
153.
X. Yu, C. Zhu, Q. Zhang, N. Wu, H. Hu, M.F.
Li, DSH Chan, A. Chin,
W.D. Wang, and D. L. Kwong, ¡§Improved Crystalization Temperature and
Interfacial Properties of HfO2 Gate Dielectrics by adding Ta2O5
with TaN Metal Gate,¡¨ Intl.. Semiconductor Device Research Symp.
(IEEE), Washington DC, Dec. 10-12, 2003.
154.
S. Zhu, H.Y. Yu, S.J. Wang, J.H. Chen, C.
Shen, C. Zhu, S.J. Lee, M.F. Li, DSH Chan, W.J. Yoo, A. Y. Du, C.H.
Tung, and J. Singh,
A. Chin, and D.L.
Kwong, ¡§Low Temperature MOSFET Technology with Schottky barrier source/
drain, high-K gate dielectrics and metal gate electrode,¡¨ Intl..
Semiconductor Device Research Symp. (IEEE),
Washington DC, Dec. 10-12, 2003.
155.
H. Hu, S. J. Ding, C. Zhu, YF Lu, M.F. Li,
B. J. Cho, and DSH Chan, S. C. Rustagi, MB Yu,
A. Chin,
and Dim-Lee Kwong, ¡§Investigation of PVD HfO2 MIM capacitors
for Si RF and mixed signal ICs application,¡¨ Intl.. Semiconductor
Device Research Symp. (IEEE),
Washington DC, Dec. 10-12, 2003.
156.
Q. C. Zhang, N. Wu, C. Zhu, M. F. Li, DSH
Chan, A. Chin,
D. L. Kwong, L.K.Bera, N. Balasubmmanian, A.Y. Du, C.H. Tung, H. T. Liu,
and J. K. O. Sin, Germanium pMOSFET with HfON gate dielectric,¡¨
Intl.. Semiconductor Device Research Symp.
(IEEE), pp. 256-257, Washington DC, Dec. 10-12, 2003.
157.
X. Yu, C. Zhu, H. Hu, A. Chin, M. F.
Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu, ¡§MIM Capacitors
with HfO2
and HfAlOx
for Si RF and Analog Applications,¡¨ Material Research Society (MRS) 2003
Spring Meeting, E5.9, San Francisco, USA, April 21-25, 2003.
158.
Q. C. Zhang, C. Zu, N. Wu, A. Chin,
M. F. Li, B. J. Cho, L. K. Bera, and D. L. Kwong, "Germanium MOS
capacitors with ultra thin HfO2 gate dielectric", International
Conference on Materials for Advanced Technologies, Singapore, 2003.
159.
S. J. Kim, H. F. Lim, H. Hu, X. F. Yu, H.
Y. Yu, B. J. Cho, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong,
"Properties of PVD Hafnium oxide films in metal-insulator-metal
structure and the role of HfN barrier at dielectric/metal interface",
International Conference on Materials for Advanced Technologies,
Singapore, 2003.
160.
C. H. Huang, H. Y. Li,
A. Chin,
V. Liang, and S. C. Chien, ¡§Optimized Noise and Consistent RF Model for
0.18mm
MOSFETs,¡¨ International Symp. on VLSI Technology, System, and
Applications, (IEEE),
pp. 109-112, 2003.
161.
C. H. Huang, C.Y. Lin, H. Y. Li, W. J.
Chen, A. Chin,
and P. Mei , ¡§La2O3/Si0.3Ge0.7
p-MOSFETs and Ni Germano-Silicide,¡¨ International Symp. on VLSI
Technology, System, and Applications,
(IEEE),
pp. 52-55, 2003.
162.
C. Y. Lin, H. Y. Lee, A. Chin, Y.
T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong ¡§1.3
mm
light emission from Al2O3/Si1-xGex/Si
MOS tunnel diodes,¡¨ 5th Pacific Rim Conference on Lasers and
Electro-Optics, (IEEE),
vol. 1, pp. 269-269, 2003.
163.
C. Y. Lin, H. Y. Lee, A. Chin, Y.
T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong ¡§Light emission in (La,
Al)2O3/Si MOS tunnel diodes¡¨ 5th
Pacific Rim Conference on Lasers and Electro-Optics, (IEEE),
vol. 2, pp. 616-616, 2003.
164.
S. B. Chen,
C. H. Lai,
A. Chin,
J. C. Hsieh, and J. Liu, ¡§RF
MIM Capacitors Using High-K Al2O3 and AlTiOx
Dielectrics,¡¨ IEEE
MTT-S Intl.
Microwave Symp. Dig.,
vol. 1, pp. 201-204, June 2002.
165.
K. T. Chan, C.
Y. Chen, A.
Chin, J. C. Hsieh, and J. Liu, T.
S. Duh, and W. J. Lin, ¡§High Performance 40-GHz Bandpass Filters on Si
Using Proton Implantation,¡¨ 60th Device Research
Conference (DRC)
(IEEE), pp.
69-70, Santa Barbara, CA, June 2002.
166.
C. H. Huang,
C. H. Lai, J. C. Hsieh, and J. Liu, and
A. Chin,
¡§RF noise in deep sub-mm
MOSFETs and proposed solution,¡¨ 60th Device Research
Conference (DRC)
(IEEE), pp.
71-72, Santa Barbara, CA, June 2002.
167.
C. Y. Lin, C. H. Lai, W. J. Chen,*
and A. Chin,
¡§Formation of high quality silicide on SiGe with high Ge contents,¡¨
44th Electronic Materials Conference (EMC), Santa
Barbara, CA, June 2002.
168.
K. T. Chan,
A. Chin,
Y. B. Chen, Y.-D. Lin, D. T. S. Duh, and W. J. Lin, ¡§Integrated Antennas
on Si, Proton-Implanted Si and Si-on-Quartz,¡¨
IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 903-906, Washington DC, Dec. 2001.
169.
M. Y. Yang, S. B. Chen,
A. Chin,
C. L. Sun, B. C. Lan, and S. Y. Chen, ¡§One-Transistor PZT/Al2O3,
SBT/Al2O3 and BLT/Al2O3
Stacked Gate Memory,¡¨
IEEE International Electron Devices Meeting
(IEDM)
Tech. Dig., pp. 795-798, Washington DC, Dec. 2001.
170.
A. Chin,
C. S. Liang, C. Y. Lin, C. C. Wu, and J. Liu, ¡§Strong and Efficient
Light Emission in ITO/Al2O3 Superlattice Tunnel
Diode,¡¨ IEEE
International Electron Devices Meeting (IEDM)
Tech. Dig., pp. 171-174, Washington DC, Dec. 2001.
171.
A. Chin,
S. B. Chen, K. T. Chan, J. C. Hsieh, M. H. Chang, C. C. Lin, and J. Liu,
¡§RF Performance Limitation of High-k AlTiOx and Al2O3
Gate Dielectrics,¡¨ International Workshop on Gate Insulator, pp.
62-63, Tokyo, Japan, Nov., 2001.
(Invited paper)
172.
K. T. Chan,
A. Chin,
C. M. Kwei, D. T. Shien, and W. J. Lin ¡§Transmission Line Noise from
Standard and Proton-Implanted Si,¡¨ IEEE
MTT-S Intl. Microwave Symp.
Dig., vol. 2, pp. 763-766, June 2001.
173.
A. Chin,
M. Y. Yang, S. B. Chen, C. L. Sun, and S. Y. Chen ¡§Fast Write Time and
Long Retention 1T Memory,¡¨ 59th Device Research Conference
(DRC) (IEEE),
pp. 18-19, Notre Dame, IN, June 2001.
174.
A. Chin,
¡§Gate oxide integrity of SiGe p-MOSFET with high current drive,¡¨
International Semiconductor Technology Conference, Japan, 2001.
(Invited paper)
175.
Y. H. Lin, Y. C. Chen, F. M. Pan, I. J.
Hsieh, and A. Chin,
¡§The thickness dependent gate oxide integrity degradation by Cu
contamination,¡¨ 43th Electronic Materials Conference
(EMC), Notre Dame, IN, June 2000.
176.
A. Chin,
¡§Super MOSFET using high K gate dielectric and SiGe,¡¨ 59th
Symp. on Semiconductors & IC Technology, Tokyo Japan, Dec. 2000.
(Invited paper)
177.
Y. H. Wu,
A. Chin, K. H. Shih, C. C. Wu, S. C. Pai, C. C. Chi, and C. P. Liao,
¡§RF loss and crosstalk on extremely high resistivity (10K-1MW-cm)
Si fabricated by ion implantation,¡¨ IEEE
MTT-S International Microwave
Symp.Dig., vol. 1, pp. 221-224, June 2000.
178.
Y. H. Wu,
A. Chin, C. S. Liang, and C. C. Wu, ¡§The performance limiting
factors as RF MOSFETs scale down,¡¨ IEEE
RF-IC Symp., pp. 151-155, June 2000.
179.
A. Chin,
Y. H. Wu, S. B. Chen, C. C. Liao, and W. J. Chen, ¡§High Quality La2O3
and Al2O3 Gate Dielectrics with Equivalent Oxide
Thickness 5-10Å,¡¨
IEEE
Symp. on VLSI Technology,
pp. 16-17, US, June 2000.
(Highlight Section Paper)
180.
A. Chin
¡§The possible materials and requirement of high-K gate dielectrics for
VLSI,¡¨ MRS High-K Gate Dielectrics workshop, US, June 2000.
(Invited paper)
181.
Y. H. Wu, K. T. Chan, S. B. Chen, W. J.
Chen, and A. Chin, ¡§Improved shallow junction integrity using
single crystalline CoSi2,¡¨ 42th Electronic
Materials Conference (EMC), Boulder, CO, June 2000.
182.
S. B. Chen, C. H. Huang, Y. H. Wu, W. J.
Chen, and A. Chin, ¡§High quality thermal ultra-thin gate oxide
directly grown on high temperature formed Si0.3Ge0.7,¡¨
42th Electronic Materials Conference (EMC), Boulder,
CO, June 2000.
183.
Y. H. Wu, M. Y. Yang, S. B. Chen, W. J.
Chen, A. Chin, and C. M. Kwei, ¡§High frequency
characterization of mega-ohm resistivity Si formed by high-energy ion
implantation,¡¨ 42th Electronic Materials Conference (EMC),
Boulder, CO, June 2000.
184.
A. Chin,
C. C. Liao, C. H. Lu, W. J. Chen, and C. Tsai, ¡§Device and Reliability
of High-K Al2O3 Gate Dielectric with Good Mobility
and Low Dit,¡¨
IEEE
Symp. on VLSI Technology,
p.135-136, Japan, June 1999.
185.
Y. H. Wu, W. J. Chen, A. Chin and C.
Tsai, ¡§Electrical and structure characterization of single crystalline
SiGe formed by Ge deposition and RTP,¡¨ 41th Electronic
Materials Conference (EMC), Santa Barbara, CA, June 1999.
186.
C. C. Liao, W. J. Chen, C. H. Lu, A.
Chin and C. Tsai, ¡§Electrical properties of Al2O3
gate dielectric,¡¨ 41th Electronic Materials Conference
(EMC), Santa Barbara, CA, June 1999.
187.
B. C. Lin, Y. C. Cheng, A. Chin, T.
Wang, and C. Tsai, ¡§The Deuterium Effect on SILC,¡¨ 30th
Intl. Conference on Solid-State Devices & Materials (SSDM)
(IEEE),
Hiroshima, Japan, Sept. 1998.
188.
I. J. Hsieh, C. C. Liao, C. Tsai, and A.
Chin, ¡§From Strain-Compensated In0.80Ga0.20As
/InAlAs to InAs/InAlAs HEMT¡¦s,¡¨ 30th Intl. Conference on
Solid-State Devices & Materials (SSDM)
(IEEE),
Hiroshima, Japan, Sept. 1998.
189.
A. Chin,
¡§Mobility and oxide breakdown behavior in ultra-thin oxide with
atomically smooth interface,¡¨ 5th International Conf. On
Solid State and IC Technology (ICSICT),
(IEEE),
China, Oct. 1998. (Invited
paper)
190.
C. C. Liao, A. Chin, and
C. Tsai, ¡§Electrical Characterization of Al2O3 on
Si from MBE-grown AlAs and Al ,¡¨ 10th International
Conference on Molecular Beam Epitaxy (MBE) Dig., pp. 652-655,
Cannes, France, August 1998.
191.
A. Chin,
B. C. Lin, W. J. Chen, Y. B. Lin, and C.
Tsai, ¡§The Effect of thin gate oxide with HF vapor pretreatment and
in-situ native oxide desorption¡¨40th Electronic Materials
Conference (EMC), Charlottesville, Virginia, June 1998.
192.
A. Chin,
D. Prinslow, V. Tsai, G. Nasserbakht, and B. Eklund, ¡§Possibility of
MMIC on Si: The Lossy Substrate Issue,¡¨ International Symp. on VLSI
Technology, System, and Applications,
(IEEE),
June 1997.
193.
A. Chin,
R. H. Kao, W. J. Chen, B. C. Lin, T. Chang, C. Tsai, and J.
C.-M. Huang, ¡§Ultra-thin oxide with atomically smooth interfaces,¡¨
International Symp. on VLSI Technology, System, and Applications,
(IEEE),
June 1997.
194.
A. Chin,
K. Lee, W. J. Chen, Y. S. Zhang, S. Horng, and J. H. Kao, ¡§Picosecond
photoresponse of carriers on Si,¡¨ 38th Electronic
Materials Conference (EMC) Santa Barbara, CA, June 1996.
195.
A. Chin,
K. Lee, Y.-C. Huang, Y.-S. Lin, and W. Hsu, ¡§Novel processing technique
for thin Si diaphragms,¡¨ Micro System Technologies 96, Germany,
Sept. 1996.
196.
A. Chin,
Y. S. Kao, K. Y. Hsieh, W. J. Chen,
and J. H. Kao, ¡§Growth induced low-dimensional quantized
microstructure and optical property enhancement in (111)A AlGaAs,¡¨ 38th
Electronic Materials Conference (EMC) Santa Barbara, CA, June 1996.
197.
A. Chin,
K. Lee, J. Chu, and S. S. Li, ¡§AlGaAs/GaAs, AlGaAs/InGaAs multiple
quantum wells and Si-doped p-type quantum well infrared photodetectors
grown on (311)A GaAs,¡¨ 9th International Conference on
Molecular Beam Epitaxy, CA., August 1996.
198.
A. Chin,
B. C. Lin, G. L. Gu, K. Y. Hsieh, M. J. Jou, and B. J. Lee, ¡§Novel
approach to enhance the optical property in AlGaAs and InGaAlP by
natural ordering during growth,¡¨ 22nd Intl. Symposium on
Compound Semiconductors, Korea, Aug. 1995.
199.
J. Chu, S. S. Li, A. Chin, S. R.
Yen, and K. M. Chang, "Investigation of Si-doped p-type GaAs/AlGaAs and
strained-layer InGaAs/AlGaAs quantum well infrared photodetectors grown
on (311) GaAs for Mid-and Long-Wavelength IR Detection," 3rd
Intl. Symp. on Long Wavelength Infrared Detectors and Arrays-
Electrochemical Soc., Chicago, IL 1995.
200.
C. Bru-Chevallier, G. Archinard, P. Berger,
Y. Baltagi, T. Benyattou, G. Guillot, and A. Chin, "
Piezoelectric constant determination from photoreflectance measurements
in strained InGaAs/AlGaAs layers grown on polar substrates,"
Materials Research Society Meeting (MRS), Boston, Nov 1995.
201.
A. Chin,
K. Y. Hsieh and H. Y. Lin, "Natural Ordering and Quantum Confinement in
(111)A and (111)B AlGaAs," International Conference on Low
Dimensional Structures and Devices, Pan Pacific Singapore, May 1995.
202.
A. Chin,
K. Y. Hsieh and H. Y. Lin, "Late news paper: Spontaneous formation of Al
rich and Ga rich AlxGa1-xAs/AlyGa1-yAs
superlattice and strong enhancement of optical and electrical
properties," 8th International Conference on Molecular
Beam Epitaxy, Osaka, Japan, August 1994.
203.
A. Chin,
K. Hsieh, and U.
Das, ¡§Observation of Enhanced Optical Properties and Spontaneous
Ordering in (111) AlGaAs,¡¨ 36th Electronic Materials
Conference (EMC) Boulder, CO., June 1994.
204.
Z. Osman, U. Das, and A. Chin,
"Nonlinearities in Strained (111) InGaAs/AlGaAs MQWs," 36th
Electronic Materials Conference (EMC), Boulder, CO., June 1994.
205.
H. Y .Lin, S. C. Peng, F. C. Wei, L. D.
Deng, and A. Chin, ¡§Enhanced optical and electrical properties in
(III)B AlGaAs,¡¨ IEDMS, Sept. 1994.
206.
H. H. Wang, J. F. Whitaker, A. Chin,
J. Mazurowski, and J. Ballingall, "Subpicosecond Cryogenic Electrical
Response of Unannealed Low Temperature Grown GaAs,"13th
Conference on Lasers and Electro-Optics (CLEO), Technical Digest Vol.
11, Optical Society of America, Baltimore, MD., May 1993.
207.
A. Chin,
L. Yang, P. Martin,
K. Nordheden, J. Ballingall, T. Yu, and P. C. Chao, "High Performance
HBT Grown by MBE Using Novel Growth Method", North American Molecular
Beam Epitaxy Conference, Ottwa, Canada, October 1992.
208.
A. Chin,
S. Hersee, P.
Martin, J. Mazurowski, J. Ballingall, J. A. Glass, and J. T. Spencer, "CBE
Growth of InP with Triethylindium and Metalorganic Phosphorus
Precursors", Materials Research Society Meeting (MRS), Boston,
MA., December 1992.
209.
A. Chin,
P. Martin, U. Das,
J. Mazurowski, and J. Ballingall, "CBE Growth of InP Using
Triethylindium and Bisphosphinoethane", North American Molecular Beam
Epitaxy Conference, Ottwa, Canada, October 1992.
210.
W. Zhou, D. D. Smith, H. Shen, J.
Pamulapati, M. Dutta, A. Chin, and J. M. Ballingall,
"Magneto-reflectance Studies of (111) Grown GaAs/AlGaAs Quantum Wells,"
American Physical Society Meeting, Indianapolis, IN, March 1992.
211.
A. Chin,
P. Martin, J.
Ballingall, T. Yu, and J. Mazurowski, " High Quality Materials and
Heterostructures on (111)B GaAs", 11th Molecular Beam
Epitaxy workshop, Austin, Texas, September 1991.
212.
A. Chin,
P. Martin, J.
Ballingall, T. Yu, and J. Mazurowski, "MBE Grown High Quality (111)
AlGaAs/GaAs and GaAs/InGaAs/GaAs Heterostructures", 33rd
Electronic Materials Conference (EMC), Boulder, CO., June 1991.
213.
J. H. Zhao, T. Burke, D. Larson, M. Weiner,
A. Chin, J. M. Ballingall, and T. H. Yu, "A High Performance
Optically Gated Heterostructure Thyristor Passivated With LT-GaAs,¡¨
Materials Research Society Meeting (MRS), Boston, MA., December
1991.
214.
S. D. Hersee, L. Yang, M. Kao, P. Martin,
J. Mazurowski, A. Chin, and J. M. Ballingall, "MOMBE GaAs and
AlGaAs for Microelectronic Devices,"3rd International
Conference on Chemical Beam Epitaxy and Related Growth Techniques,
Oxford, UK, September, 1991.
215.
A. Chin,
T. Y. Chang, A. Ourmazd, and E. M. Monberg, "Partial Ordering and
Enhanced Mobility in Ga0.47In0.53As
MODFET Grown on (110) InP by Molecular Beam Epitaxy,"32nd
Electronic Materials Conference (EMC), Santa Barbara, CA, June 1990.
216.
A. Chin,
T. Y. Chang, A. Ourmazd, E. M. Monberg, A. M. Chang, and C. Kurdak,
¡§Effects of Substrate Orientation and Pseudomorphic Growth on Alloy
Scattering in Modulation Doped GaInAs,¡¨ 6th International
Conference on Molecular Beam Epitaxy, La Jolla, CA, August 1990.
217.
A. Chin,
and T. Y. Chang, "Achievement of Exceptionally High Mobilities in
Modulation Doped Ga1-xInxAs
on InP Using a strain Composited Structure," 10th
Molecular Beam Epitaxy workshop, Raleigh, NC, September 1989.
218.
A. Chin,
and T. Y. Chang, "Multilayer Reflectors by MBE for Resonance Enhanced
Absorption in Thin High Speed Detectors," 10th Molecular
Beam Epitaxy workshop, Raleigh, NC, September 1989.
219.
A. Chin,
P. K. Bhattacharya, K. H. Chang, and D. Biswas, "Optical and Structural
Properties of Molecular Beam Epitaxial GaAs on Sapphire," 9th
Molecular Beam Epitaxy workshop, West Lafayette, September 1988.
220.
M. Marso, A. Chin, P. K.
Bhattacharya and H. Beneking, "GaInAs Camel Diodes Grown by MBE," 18th
European Solid State Device Research Conference (ESSDERC),
(IEEE), Montpellier, France,
September 1988.
221.
A. Chin,
and P. K. Bhattacharya, "A High-Gain Superlattice Bipolar Transistor
with Controlled Carrier Multiplication,"14th International
Symposium on GaAs and related Compounds, Crete, Greece, Sept. 1987
(eds. A. Christou and H. S. Rupprecht), The Institute of Physics,
Bristol, 821(1988).
222.
A. Chin,
and P. K. Bhattacharya, "A Controlled-Avalanche Superlattice
Transistor," IEEE /Cornell 11th Biennial Conference on Advanced
Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY.,
August, 1987.
223.
A. Chin,
P. K. Bhattacharya, W. P. Hong, and W. Li," Molecular Beam Epitaxial
Growth of High Quality In0.52Al0.48As
and In1-x-yGaxAlyAs,"
8th
Molecular Beam Epitaxy workshop,
Los Angeles, September 1987.
224.
W. P. Hong, A. Chin, N. Debbar, J
Hinckley, P. K. Bhattacharya, J. Singh and R. C. Clarke, "Material
properties and clustering in Molecular Beam Epitaxial In0.52Al0.48As
and In1-x-yGaxAlyAs,"
7th
Molecular Beam Epitaxy workshop,
Boston, MA., October 1986.
225.
W. P. Hong, S. Dhar, P. R. Berger, A.
Chin, and P. K. Bhattacharya, "Deep Levels in Molecular Beam
Epitaxial InxAl1-xAs/InP," 29th
Electronic Materials Conference (EMC), Amherst, MA., June 1986.
226.
F-Y. Juang, W. Li, P. K. Bhattacharya, U.
Das and A. Chin, "III-V Superlattice Photodiodes," 13th
International Symp. on GaAs and related Compounds, Las Vegas, Utah,
September 1986, (Institute of Physics, London, 1987, ed. W. T.
Lindley), Inst. Phys. Conf. Series 83, 411(1987).
227.
Y. Nashimoto, S. Dhar, W. P. Hong, A.
Chin, P. Berger, and P. K. Bhattacharya, "Investigation of Molecular
Beam Epitaxial In0.53Ga0.47As
Regrown on Liquid Phase Epitaxial In0.53Ga0.47As/InP,"
6th Molecular Beam Epitaxy workshop, Minneapolis, MN.,
August 1985.
Others:
1.
Albert Chin,
¡§Green Electronic
Device,¡¨ Intl. Electron Devices & Materials Symp. (IEDMS), Nov.
29-30, 2012. (Keynote speaker)
2.
Y. C. Chiu, C. Y. Tsai, Z. W. Zheng, Ming
Liu, and Albert Chin, ¡§Retention and
Endurance Improvements in Flash Memory Using Atomic Level
Controllability,¡¨ Intl. Electron Devices & Materials Symp. (IEDMS),
Nov. 29-30, 2012.
3.
Y. C. Chiu, C. Y. Tsai, S. H. Lin, V.A.
Gritsenko, and Albert Chin, ¡§Low Voltage Green Flash Memory
Device Using High-£e Dielectric and Quantum Trap Technology,¡¨ Nov. 8-9,
2012.
4.
Albert Chin,
¡§Low-Power High-Performance Electronic Devices for SoC,¡¨ Green
Technology Symp., Dallas, TX, Aug. 29 2009.
5.
Albert Chin,
¡§The Defect-Free Ge-on-Insulator Transistor with Advanced High-K
Dielectric and Metal-Gate Technology,¡¨ Asia Nano Forum NEWSLETTER,
no. 5, pp. 15-16, Feb. 2009.
6.
Albert Chin,
C. H. Cheng, S. H. Lin, N. C. Su, S. J. Wang, C. P. Chou, and F. S. Yeh,
¡§High-k
Dielectric Metal-Electrode Innovation for Nano CMOS & Memory Devices,¡¨
National Science Council ¡V Japan Science & Technology Agency (NSC-JST)
Nano Device Workshop, July 30-31, 2008. (Invited paper)
7.
Albert Chin,
¡§High-k
Dielectric Innovation to Logic and Memory Devices by a
Local/International Team Effort,¡¨ TSMC-SRC GRC Workshop, TSMC
Headquarter, Jan. 29, 2007. (Invited paper)
8.
Albert Chin,
¡§Application High-k dielectric for Logic CMOS, Non-volatile memory and
DRAM,¡¨ Seminar at Graduate institute Electronics Engineering, Dept. of
Electrical Eng., National Taiwan University, April 16, 2007.
9.
Albert Chin,
¡§Application High-k dielectric for Logic CMOS, Non-volatile memory and
DRAM¡¨, Seminar at Institute of Electronics Engineering, Dept. of
Electrical Eng., National Tsung Hua University, Nov. 2, 2007.
10.
Albert Chin,
C. H. Wu, S. J. Wang, Y. H. Wu, S. H. Lin, and F. S. Yeh, ¡§New
Generation High-k
CMOS Using MBE,¡¨ MBE_Taiwan, May 2007. (Invited paper)
11.
Albert Chin,
C. H. Lai, K. C. Chiang, C. H. Wu, S. J. Wang,
and H. L. Hwang, ¡§Advanced Memory and Logic Devices Using High-k
Nano-Technology,¡¨ in Symposium on Nano Device Technology (SNDT), April
2006. (Invited paper)
12.
Albert Chin,
C. C. Chen, C. C. Laio, D. S. Yu, K. C. Chiang, W. J. Chen, M.-F. Li, W.
J. Yoo, C. Zhu, and G. Samudra, ¡§3D Integrated Metal-Gate/High-k
CMOS for Both DC and AC Power Consumption Solutions,¡¨ Symposium on Nano
Device Technology (SNDT), May 3~5, 2005. (Invited paper)
13.
ªL¤@¥¡B¯ð»ñ¼w¡B´¿·Ô´Ñ,¡§¹q¾÷¸ê¤u»â°ì¦p¦ó§ë½Z¾Ç³N´Á¥Z,¡¨¬ì§Þ¤j¼Ó,
¥x¥_¥«©M¥ªF¸ô¤G¬q106¸¹,
Feb. 27, 2008.
14.
§d«Ø§»¡B¬x±l¯é¡B¤ý¤ô¶i¡BªLõ½n¡BÁÂ焸®a¡B¶À´f¨}¡B¯ð»ñ¼w, ¡§45©`¦Ì¥H¤Uªº°ª¤¶¹q«Y¼Æ¹h·¥»Pª÷Äݹh·¥CMOS¤¸¥ó,¡¨
©`¦Ì³q°T, 14¨÷²Ä¤@´Á,
pp. 25-30, April 2007. (Invited paper)